參數(shù)資料
型號(hào)： NTB75N03-06
廠商： ON SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK
中文描述： 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 418AA-01, D2PAK-3
文件頁(yè)數(shù)： 3/8頁(yè)
文件大小： 60K
代理商： NTB75N03-06
NTP75N0306, NTB75N0306
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ.
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (Note 2)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Negative)
V
(BR)DSS
30
57
Vdc
mV
°
C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage (Note 2)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.6
6
2.0
Vdc
mV
°
C
Static DraintoSource OnResistance (Note 2)
(V
GS
= 10 Vdc, I
D
= 37.5 Adc)
R
DS(on)
5.3
6.5
m
Static DraintoSource On Resistance (Note 2)
(V
GS
= 10 Vdc, I
D
= 75 Adc)
(V
GS
= 10 Vdc, I
D
= 37.5 Adc, T
J
= 125
°
C)
V
DS(on)
0.53
0.35
0.68
0.50
Vdc
Forward Transconductance (Notes 2 & 4) (V
DS
= 3 Vdc, I
D
= 20 Adc)
g
FS
58
Mhos
DYNAMIC CHARACTERISTICS
(Note 4)
Input Capacitance
C
iss
4398
5635
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0,
f = 1.0 MHz)
C
oss
1160
1894
Transfer Capacitance
C
rss
317
430
SWITCHING CHARACTERISTICS
(Notes 3 and 4)
TurnOn Delay Time
t
d(on)
16
30
ns
Rise Time
(V
GS
= 5.0 Vdc,
= 20 Vdc I
V
DD
= 20 Vdc, I
D
= 75 Adc,
R
= 4.7 ) (Note 2)
G
t
r
130
200
TurnOff Delay Time
t
d(off)
65
110
Fall Time
t
f
105
175
Gate Charge
= 5 0 Vdc
(V
GS
= 5.0 Vdc,
I
= 75 Adc,
DS
= 24 Vdc) (Note 2)
Q
T
57
75
nC
V
Q
1
11
15
Q
2
34
50
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
= 75 Adc, V
= 0 Vdc)
(I
S
= 75 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
1.19
1.09
1.25
Vdc
Reverse Recovery Time
(Note 4)
t
rr
37
ns
(I
S
= 75 Adc, V
GS
= 0 Vdc
dl
S
/dt = 100 A/ s) (Note 2)
t
a
20
Reverse Recovery Stored
Charge (Note 4)
t
b
17
C
Q
RR
0.023
2. Pulse Test: Pulse Width
3. Switching characteristics are independent of operating junction temperatures.
4. From characterization test data.
300 S, Duty Cycle
2%.
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