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參數(shù)資料
| 型號(hào)： | NTB75N03-06 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK |
| 中文描述： | 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418AA-01, D2PAK-3 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | NTB75N03-06 |
NTP75N0306, NTB75N0306
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
30
Vdc
DraintoGate Voltage
(RGS = 10 M )
V
DGB
30
Vdc
GatetoSource Voltage Continuous
V
GS
±
20
Vdc
Nonrepetitive (tp
≤
10 ms)
V
GS
±
24
Vdc
Drain Current
Continuous @ T
C
= 25
°
C
Continuous @ T
C
= 100
°
C
Single Pulse (tp
≤
10 s)
I
D
I
D
I
DM
75
59
225
Adc
Apk
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
P
D
125
1.0
2.5
W
W/
°
C
W
Operating and Storage Temperature Range
T
J
and T
stg
55 to 150
°
C
Single Pulse DraintoSource Avalanche Energy Starting T
J
= 25
°
C
(V
DD
= 38 Vdc, V
GS
= 10 Vdc, L = 1 mH, I
L
(pk) = 55 A, V
DS
= 40 Vdc)
E
AS
1500
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient (Note 1)
R
JC
R
JA
R
JA
1.0
62.5
50
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
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| NTB75N03-06T4 | Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB75N03-06T4 | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N03-6G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N03-6T4G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N03L09 | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N03L09G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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