參數(shù)資料
型號： NTB4302
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 74 Amps, 30 Volts
中文描述： 74 A, 30 V, 0.0093 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 418AA-01, D2PAK-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 71K
代理商： NTB4302
NTP4302, NTB4302
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
μ
Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
30
25
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
1.0
10
μ
Adc
GateBody Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.9
3.8
3.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 37 Adc)
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 4.5 Vdc, I
D
= 10 Adc)
R
DS(on)
6.8
6.8
9.5
9.3
9.3
12.5
m
Forward Transconductance (Note 3) (V
DS
= 10 Vdc, I
D
= 20 Adc)
g
FS
40
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 24 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
2050
2400
pF
Output Capacitance
C
oss
640
800
Transfer Capacitance
C
rss
225
310
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
10
18
ns
Rise Time
= 24 Vdc, I
= 20 Adc,
(V
DD
D
20 Adc,
V
GS
= 10 Vdc, R
G
= 2.5
) (Note 3)
t
r
22
35
TurnOff Delay Time
t
d(off)
45
75
Fall Time
t
f
35
70
TurnOn Delay Time
t
d(on)
18
ns
Rise Time
= 24 Vdc, I
= 10 Adc,
(V
DD
D
10 Adc,
V
GS
= 4.5 Vdc, R
G
= 2.5
) (Note 3)
t
r
70
TurnOff Delay Time
t
d(off)
32
Fall Time
t
f
30
Gate Charge
(V
DS
= 24 Vdc, I
D
= 37 Adc,
V
GS
= 4.5 Vdc) (Note 3)
Q
T
28
nC
Q
gs
7.5
Q
gd
19
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 20 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
0.90
0.75
1.3
Vdc
Reverse Recovery Time
(I
S
= 20 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/
μ
s) (Note 3)
V
t
rr
37
ns
t
a
21
t
b
16
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
Q
RR
0.035
μ
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTB4302G 功能描述:MOSFET 30V 74A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB4302T4 功能描述:MOSFET 30V 74A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB4302T4G 功能描述:MOSFET 30V 74A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB45N06 功能描述:MOSFET 60V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB45N06G 功能描述:MOSFET 60V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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