參數(shù)資料
型號(hào)： NP80N055KHE
元件分類： JFETs
英文描述： 80 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： MP-25ZK, TO-263, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 77K
代理商： NP80N055KHE
Data Sheet D14096EJ6V0DS
2
NP80N055CHE,NP80N055DHE,NP80N055EHE,NP80N055KHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 55 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
A
2.0
3.0
4.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 40 A
12
30
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 40 A
8.2
11
m
Input Capacitance
Ciss
VDS = 25 V
2400
3600
pF
Output Capacitance
Coss
VGS = 0 V
380
570
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
180
330
pF
Turn-on Delay Time
td(on)
VDD = 28 V, ID = 40 A25
55
ns
Rise Time
tr
VGS = 10 V13
32
ns
Turn-off Delay Time
td(off)
RG = 1
45
91
ns
Fall Time
tf
13
33
ns
Total Gate Charge
QG
VDD = 44 V,
40
60
nC
Gate to Source Charge
QGS
VGS = 10 V
12
nC
Gate to Drain Charge
QGD
ID = 80 A16
nC
Body Diode Forward Voltage
VF(S-D)
IF = 80 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 80 A, VGS = 0 V
49
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s90
nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NP80N055KHE-E1-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N055KHE-E2-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N055KLE 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N055KLE-E1-AY 功能描述:MOSFET N-CH 55V 80A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
NP80N055KLE-E2-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
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