
NLX2G86
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VCC
(V)
TA = 255C
*405C v TA v 855C
Unit
Condition
Min
Typ
Max
Min
Max
VIH
HighLevel Input
Voltage
1.65 to 1.95
2.3 to 5.5
0.75 VCC
0.7 VCC
0.75 VCC
0.7 VCC
V
VIL
LowLevel Input
Voltage
1.65 to 1.95
2.3 to 5.5
0.25 VCC
0.3 VCC
0.25 VCC
0.3 VCC
V
VOH
HighLevel Output
Voltage
VIN = VIH
1.65
1.8
2.3
3.0
4.5
1.55
1.7
2.2
2.9
4.4
1.65
1.8
2.3
3.0
4.5
1.55
1.7
2.2
2.9
4.4
V
IOH = 100 mA
1.65
2.3
3.0
4.5
1.29
1.9
2.4
2.3
3.8
1.52
2.15
2.80
2.68
4.20
1.29
1.9
2.4
2.3
3.8
V
IOH = 4 mA
IOH = 8 mA
IOH = 16 mA
IOH = 24 mA
IOH = 32 mA
VOL
LowLevel Output
Voltage
VIN = VIL
1.65
1.8
2.3
3.0
4.5
0.0
0.1
V
IOL = 100 mA
1.65
2.3
3.0
4.5
0.08
0.10
0.15
0.22
0.24
0.30
0.40
0.55
0.24
0.30
0.40
0.55
V
IOL = 4 mA
IOL = 8 mA
IOL = 16 mA
IOL = 24 mA
IOL = 32 mA
IIN
Input Leakage Current
0 to 5.5
$1.0
mA
0 V v VIN v 5.5 V
IOFF
Power Off Leakage
Current
0.0
1.0
10
mA
VIN or VOUT = 5.5 V
ICC
Quiescent Supply
Current
1.65 to 5.5
1.0
10
mA
VIN = 5.5 V, GND
AC ELECTRICAL CHARACTERISTICS tR = tF = 3.0 ns
VCC
TA = 25_C
*40_C v TA v 125_C
Symbol
Parameter
Condition
(V)
Min
Typ
Max
Min
Max
Unit
tPLH
tPHL
Propagation Delay
RL = 1 MW, CL = 15 pF
1.8 $ 0.15
2.0
7.9
9.0
2.0
10.5
ns
RL = 1 MW, CL = 15 pF
2.5 $ 0.2
1.2
4.1
7.0
1.2
7.5
RL = 1 MW, CL = 15 pF
3.3 $ 0.3
0.8
3.0
4.8
0.8
5.2
RL = 500 W, CL = 50 pF
1.2
3.8
5.4
1.2
5.9
RL = 1 MW, CL = 15 pF
5.0 $ 0.5
0.5
2.2
3.5
0.5
3.8
RL = 500 W, CL = 50 pF
0.8
2.9
4.2
1.0
4.6
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical
Unit
CIN
Input Capacitance
VCC = 5.5 V, VI = 0 V or VCC
2.5
pF
CPD
Power Dissipation Capacitance
10 MHz, VCC = 3.3 V, VI = 0 V or VCC
9
pF
10 MHz, VCC = 5.5 V, VI = 0 V or VCC
11
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the noload dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.