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參數(shù)資料
| 型號： | NIMD6302R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET |
| 中文描述： | 6500 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 751-07, SOIC-8 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 97K |
| 代理商： | NIMD6302R2 |
NIMD6302R2
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
I
D
, DRAIN CURRENT (AMPS)
30
0
0
1000
I
D
,
100
–50
1.5
1.25
(
1
0.75
0.5
0.07
0
7
1
2
3
4
5
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0
6
1
7
2
1
0
7
5
6
3
4
2
1
4
3
6
5
7
2
1
0
0.8
0.9
1
0.5
0.6
0.7
0.3
0.4
0.2
0.1
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0
R
D
,
R
D
,
I
,
I
D
,
T
J
= 25
°
C
Figure 1. On–Region Characteristics
V
GS
, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Drain Current and Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
V
DS
≥
10 V
T
J
= 25
°
C
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 4.5 V
T
J
= 125
°
C
T
J
= –55
°
C
V
GS
= 10 V
I
D
= 3 A
4
3
6
5
V
GS
= 10 V
4 V
3 V
2 V
9 V
8 V
7 V
6 V
5 V
T
J
= 25
°
C
T
J
= 100
°
C
2
3
4
5
0.01
0.02
0.03
0.04
0.05
0.06
6
V
GS
= 10 V
R
D
,
–25
0
25
50
75
100
10
5
10
15
20
25
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= –55
°
C
T
J
= 100
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NIMD6302R2/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET |
| NIMD6302R2_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:HDPlus Dual N−Channel Self−protected Field Effect Transistors with 1:200 Current Mirror FET |
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