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參數(shù)資料
| 型號： | NIMD6302R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET |
| 中文描述： | 6500 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 751-07, SOIC-8 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 97K |
| 代理商： | NIMD6302R2 |
NIMD6302R2
http://onsemi.com
2
MAIN MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
30
20
35
23
–
30
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 175
°
C)
I
DSS
–
–
–
0.065
0.2
11
10
100
100
Adc
Gate–Body Leakage Current
(V
GS
= 12 Vdc, V
DS
= 0 Vdc)
(V
GS
= 3.0 Vdc, V
DS
= 0 Vdc)
I
GSS
–
–
11
12
18
100
Adc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
(V
DS
= V
GS
, I
D
= 250 Adc, T
J
= 75
°
C)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.1
–
1.33
1.17
3.8
2.0
–
4.6
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance (Note 4)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc, T
J
@ 25
°
C)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc, T
J
@ 125
°
C)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc, T
J
@ 175
°
C)
R
DS(on)
–
–
–
35
57
69
50
65
90
m
Static Drain–to–Source On–Resistance (Note 4)
(V
GS
= 4.5 Vdc, I
D
= 3.0 Adc, T
J
@ 25
°
C)
(V
GS
= 4.5 Vdc, I
D
= 3.0 Adc, T
J
@ 125
°
C)
(V
GS
= 4.5 Vdc, I
D
= 3.0 Adc, T
J
@ 175
°
C)
R
DS(on)
–
–
–
52
81
97
60
90
110
m
Forward Transconductance (Note 4) (V
DS
= 6.0 Vdc, I
D
= 15 Adc)
g
FS
14.5
19.8
25
Mhos
DYNAMIC CHARACTERISTICS
(Note 5)
Input Capacitance
C
iss
–
301
600
pF
Output Capacitance
(V
DS
= 6.0 Vdc, V
= 0 Vdc,
f = 1.0 MHz)
C
oss
–
265
350
Transfer Capacitance
C
rss
–
82
200
SWITCHING CHARACTERISTICS
(Note 5)
Turn–On Delay Time
t
d(on)
–
9.2
9.6
ns
Rise Time
(V
DD
= 6.0 Vdc, I
D
= 2.0 Adc,
V
GS
= 4.5 Vdc, R
G
= 2.5 )
t
r
–
56.5
75.3
Turn–Off Delay Time
t
d(off)
–
35.9
40
Fall Time
t
f
–
36.3
40.6
Turn–On Delay Time
t
d(on)
–
6.3
7.0
ns
Rise Time
(V
DD
= 6.0 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc, R
G
= 2.5 )
t
r
–
2.7
3.1
Turn–Off Delay Time
t
d(off)
–
66.5
70.5
Fall Time
t
f
–
36.5
39.4
Gate Charge
Q
T
–
3.91
4.5
nC
(V
DS
= 6.0 Vdc, I
= 2.0 Adc,
V
GS
= 4.5 Vdc)
Q
1
–
1.0
1.25
Q
2
–
1.59
1.95
Q
3
–
1.48
1.64
Gate Charge
Q
T
–
8.03
13.6
nC
(V
DS
= 6.0 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc)
Q
1
–
1.06
1.36
Q
2
–
1.75
2.82
Q
3
–
1.54
1.75
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
5. Switching characteristics are independent of operating junction temperatures.
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