參數(shù)資料
型號(hào)： NE651R479A
廠商： NEC Corp.
英文描述： 0.4 W L-BAND POWER GaAs HJ-FET
中文描述： 0.4糯L波段功率GaAs黃建忠場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 69K
代理商： NE651R479A
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13670EJ2V0DS00 (2nd edition)
Date Published June 2000 NS CP(K)
Printed in Japan
1998, 2000
N-CHANNEL GaAs HJ-FET
NE651R479A
0.4 W L-BAND POWER GaAs HJ-FET
The mark
shows major revised points.
DESCRIPTION
The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear
gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
GaAs HJ-FET structure
High output power
: P
out
= +27.0 dBm TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 900 MHz, P
in
= +13 dBm
P
out
= +27.0 dBm TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= +15 dBm
P
out
= +29.5 dBm TYP. @ V
DS
= 5.0 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= +15 dBm
: G
L
= 14.0 dB TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 900 MHz, P
in
= 0 dBm
G
L
= 12.0 dB TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= 0 dBm
G
L
= 12.0 dB TYP. @ V
DS
= 5.0 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= 0 dBm
High power added efficiency : 60 % TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 900 MHz, P
in
= +13 dBm
60 % TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= +15 dBm
58 % TYP. @ V
DS
= 5.0 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= +15 dBm
High linear gain
ORDERING INFORMATION
Part Number
Package
Supplying Form
NE651R479A-T1
79A
12 mm wide embossed taping
Qty 1 kpcs/reel
Remark
To order evaluation samples, consult your NEC sales representative
(Part number for sample order: NE651R479A).
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE651R479A-A 功能描述:射頻GaAs晶體管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE651R479A-EVPW19 功能描述:射頻GaAs晶體管 For NE651R479A-A Power at 1.9 GHz RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE651R479A-EVPW24 功能描述:射頻GaAs晶體管 For NE651R479A-A Power at 2.4 GHz RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE651R479A-EVPW26 功能描述:射頻GaAs晶體管 For NE651R479A-A Power at 2.6 GHz RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE651R479A-EVPW35 功能描述:射頻GaAs晶體管 For NE651R479A-A Power at 3.5 GHz RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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