參數(shù)資料
型號(hào)： NE6510379A-T1
廠商： NEC Corp.
英文描述： 3 W L-BAND POWER GaAs HJ-FET
中文描述： 3瓦L波段功率GaAs黃建忠場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 97K
代理商： NE6510379A-T1
Preliminary Data Sheet
2
NE6510379A
RECOMMENDED OPERATING LIMITS
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
3.5
4.2
V
Operating Duty Cycle
–
Pulse width = 0.577 ms
1/3
–
Gain Compression
Gcomp
5.0
dB
Channel Temperature
T
ch
+110
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, Unless otherwise specified, using NEC standard test fixture.
All RF characteristics is measured at 1/3 duty pulse operation, pulse width = 0.577 ms at 4.616 ms/frame)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Saturated Drain Current
I
DSS
V
DS
= 2.5 V, V
GS
= 0 V
3.7
A
Pinch-off Voltage
V
p
V
DS
= 2.5 V, I
D
= 21 mA
–2.0
–0.4
V
Gate to Drain Break Down
Voltage
BV
gd
I
gd
= 21 mA
11
V
Thermal Resistance
R
th
Channel to Case
4
7
°C/W
Output Power
P
O
31.5
32.5
dBm
Drain Current
I
D
760
mA
Power Added Efficiency
η
add
44
52
%
Linear Gain
Note 1
G
L
f = 1.9 GHz, V
DS
= 3.5 V
Pin = +26 dBm, Rg = 100
I
Dset
= 200 mA (RF OFF)
Note 2
8.0
dB
Notes 1.
Pin = 0 dBm
2.
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED)
(T
A
= 25°C, Unless otherwise specified, using NEC standard test fixture.
All RF characteristics is measured at 1/3 duty pulse operation, pulse width = 0.577 ms at 4.616 ms/frame)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Output Power
P
O
35.0
dBm
Drain Current
I
D
1.40
A
Power Added Efficiency
η
add
58
%
Linear Gain
Note
G
L
f = 900 MHz, V
DS
= 3.5 V
Pin = +24 dBm, Rg = 100
I
Dset
= 200 mA (RF OFF)
13.0
dB
Note
Pin = 0 dBm
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE651R479A 功能描述:射頻GaAs晶體管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE651R479A-A 功能描述:射頻GaAs晶體管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE651R479A-EVPW19 功能描述:射頻GaAs晶體管 For NE651R479A-A Power at 1.9 GHz RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE651R479A-EVPW24 功能描述:射頻GaAs晶體管 For NE651R479A-A Power at 2.4 GHz RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE651R479A-EVPW26 功能描述:射頻GaAs晶體管 For NE651R479A-A Power at 2.6 GHz RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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