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參數(shù)資料
| 型號： | NE650R279A |
| 廠商： | NEC Corp. |
| 英文描述： | 0.2 W L, S-BAND POWER GaAs MES FET |
| 中文描述： | 0.2冊，S波段功率GaAs場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 77K |
| 代理商： | NE650R279A |
The information in this document is subject to change without notice.
N-CHANNEL GaAs MES FET
NE650R279A
0.2 W L, S-BAND POWER GaAs MES FET
1998
Document No. P13678EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
DESCRIPTION
The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile
communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high
linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
High Output Power
High Linear Gain
High Power Added Efficiency: 45% typ. @V
DS
= 6 V, I
Dset
= 50 mA, f = 1.9 GHz
: P
O (1 dB)
= +23 dBm typ.
: 16 dB typ.
ORDERING INFORMATION (PLAN)
Part Number
Package
Supplying Form
NE650R279A-T1
79A
12 mm tape width, 1 kpcs/reel
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE650R279A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
15
V
Gate to Source Voltage
V
GSO
–7
V
Drain Current
I
D
0.3
A
Gate Forward Current
I
GF
8
mA
Gate Reverse Current
I
GR
8
mA
Total Power Dissipation
P
T
2.1
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–65 to +150
°C
Caution
Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
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| NE650R479A-T1 | 0.4 W L, S-BAND POWER GaAs MES FET |
| NE650R479A | 0.4 W L, S-BAND POWER GaAs MES FET |
| NE6510379A-T1 | 3 W L-BAND POWER GaAs HJ-FET |
| NE6510379A | 3 W L-BAND POWER GaAs HJ-FET |
| NE651R479A | 0.4 W L-BAND POWER GaAs HJ-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE650R279A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:0.2 W L, S-BAND POWER GaAs MES FET |
| NE650R479A | 制造商:NEC 制造商全稱:NEC 功能描述:0.4 W L, S-BAND POWER GaAs MES FET |
| NE650R479A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:0.4 W L, S-BAND POWER GaAs MES FET |
| NE650R479A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR MESFET 制造商:Renesas 功能描述:Trans MOSFET N-CH 15V 0.6A 4-Pin Case 79A T/R |
| NE6510179 | 制造商:CEL 制造商全稱:CEL 功能描述:NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET |
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