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參數(shù)資料
| 型號： | NE555N |
| 廠商： | Fairchild Semiconductor |
| 文件頁數(shù)： | 7/13頁 |
| 文件大小： | 0K |
| 描述： | IC OSC MONO TIMING 8-DIP |
| 標準包裝： | 50 |
| 類型： | 555 型，計時器/振蕩器（單路） |
| 電源電壓： | 4.5 V ~ 16 V |
| 電流 - 電源： | 7.5mA |
| 工作溫度： | 0°C ~ 70°C |
| 封裝/外殼： | 8-DIP（0.300"，7.62mm） |
| 包裝： | 管件 |
| 供應商設備封裝： | 8-DIP |
| 安裝類型： | 通孔 |
| 其它名稱： | NE555NFS |
LM555
—
Single
T
imer
2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
LM555 Rev. 1.1.0
3
Electrical Characteristics
Values are at TA = 25°C, VCC = 5 ~ 15 V unless otherwise specified.
Notes:
1. When the output is high, the supply current is typically 1 mA less than at VCC = 5 V.
2. Tested at VCC = 5.0 V and VCC = 15 V.
3. These parameters, although guaranteed, are not 100% tested in production.
4.
This determines the maximum value of RA + RB for 15 V operation, the maximum total R = 20 MΩ, and for 5 V
operation, the maximum total R = 6.7 M
Ω.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Supply Voltage
VCC
4.5
16.0
V
Supply Current (Low Stable) (1)
ICC
VCC = 5 V, RL = ∞
36
mA
VCC = 15 V, RL = ∞
7.5
15.0
mA
Timing Error (Monostable)
Initial Accuracy (2)
ACCUR
RA = 1 kΩ to100 kΩ
C = 0.1
μF
1.0
3.0
%
Drift with Temperature (3)
Δt / ΔT50
ppm / °C
Drift with Supply Voltage (3)
Δt / ΔVCC
0.1
0.5
% / V
Timing Error (Astable)
InItial Accuracy (2)
ACCUR
RA = 1 kΩ to 100kΩ
C = 0.1
μF
2.25
%
Drift with Temperature (3)
Δt / ΔT
150
ppm / °C
Drift with Supply Voltage (3)
Δt / ΔVCC
0.3
% / V
Control Voltage
VC
VCC = 15 V
9.0
10.0
11.0
V
VCC = 5 V
2.60
3.33
4.00
V
Threshold Voltage
VTH
VCC = 15 V
10.0
V
VCC = 5V
3.33
V
Threshold Current (4)
ITH
0.10
0.25
μA
Trigger Voltage
VTR
VCC = 5 V
1.101.672.20
V
VCC = 15 V
4.5
5.0
5.6
V
Trigger Current
ITR
VTR = 0 V
0.01
2.00
μA
Reset Voltage
VRST
0.4
0.7
1.0
V
Reset Current
IRST
0.1
0.4
mA
Low Output Voltage
VOL
VCC = 15 V
ISINK = 10 mA
0.06
0.25
V
ISINK = 50 mA
0.30
0.75
V
VCC = 5 V, ISINK = 5 mA
0.05
0.35
V
High Output Voltage
VOH
VCC = 15 V
ISOURCE = 200 mA
12.5
V
ISOURCE = 100 mA
12.75
13.30
V
VCC = 5 V, ISOURCE = 100 mA
2.75
3.30
V
Rise Time of Output(3)
tR
100
ns
Fall Time of Output(3)
tF
100
ns
Discharge Leakage Current
ILKG
20
100
nA
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