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參數(shù)資料
| 型號： | NE52118-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
| 中文描述： | 募到S波段低噪聲放大器npn型GaAs HBT的 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 63K |
| 代理商： | NE52118-T1 |
Preliminary Data Sheet P14544EJ1V0DS00
4
NE52118
GAIN CHARACTERISTICS
V
CE
= 2 V
I
C
= 3 mA
40
35
30
25
20
15
10
5
0
I
2
l
2
M
M
0.1
1.0
10.0
Frequency f (GHz)
INSERTION POWER GAIN, MAXIMUM AVAILABLE
POWER GAIN, MAXIMUM STABLE POWER GAIN vs.
FREQUENCY
30
25
20
15
10
5
0
I
2
l
2
M
M
10
1
100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAXIMUM AVAILABLE
POWER GAIN, MAXIMUM STABLE POWER GAIN vs.
COLLECTOR CURRENT
30
25
20
15
10
5
0
I
2
l
2
M
M
10
1
100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAXIMUM AVAILABLE
POWER GAIN, MAXIMUM STABLE POWER GAIN vs.
COLLECTOR CURRENT
lS
21e
l
2
MSG
lS
21e
l
2
MSG
lS
21e
l
2
MSG
MAG
f = 1 GHz
V
CE
= 2 V
f = 2 GHz
V
CE
= 2 V
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