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參數(shù)資料
| 型號(hào)： | NE52118-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
| 中文描述： | 募到S波段低噪聲放大器npn型GaAs HBT的 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | NE52118-T1 |
Preliminary Data Sheet P14544EJ1V0DS00
3
NE52118
TYPICAL CHARACTERISTICS (T
A
= +25
°
C)
DC CHARACTERISTICS
f = 2.0 GHz
V
CE
= 2 V
Z
S
= Z
L
= 50
10
8
6
4
2
0
C
C
0
0.5
1
1.5
DC Base Voltage V
BE
(V)
COLLECTOR CURRENT vs. DC BASE VOLTAGE
40
50
30
20
10
0
T
T
0
25
50
75
100
125
150
Ambient Temperature T
A
(
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
V
CE
= 2 V
6
G
a
NF
5
4
3
2
0
1
N
A
a
30
25
20
15
10
5
0
1
10
100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN vs.
COLLECTOR CURRENT
1 000
100
10
1
D
F
0.1
1
10
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
10
8
6
4
2
0
C
C
50 A
40 A
μ
30 A
20 A
I
B
= 10 A
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
= 2 V
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