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參數(shù)資料
| 型號： | NE52118-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
| 中文描述： | 募到S波段低噪聲放大器npn型GaAs HBT的 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 63K |
| 代理商： | NE52118-T1 |
Preliminary Data Sheet P14544EJ1V0DS00
11
NE52118
PRECAUTION
Avoid high static voltage and electric fields.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition
Symbol
Infrared Reflow
Package peak temperature: 230 °C or below
Time: 30 seconds or less (at 210 °C)
Count: 3, Exposure limit: None
Note
IR30-00-3
VPS
Package peak temperature: 215 °C or below
Time: 40 seconds or less (at 200 °C)
Count: 2, Exposure limit: None
Note
VP15-00-2
Wave Soldering
Soldering bath temperature: 260 °C or below
Time: 10 seconds or less
Count: 1, Exposure limit: None
Note
WS60-00-1
Partial Heating
Pin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Exposure limit: None
Note
–
Note
After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E)
.
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