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參數(shù)資料
| 型號： | NE34018-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | 募到S波段低噪聲放大器N溝道黃建忠場效應(yīng)管 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大?。?/td> | 114K |
| 代理商： | NE34018-T2 |
14
NE34018
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
Soldering process
Soldering conditions
Symbol
VPS
Package peak temperature: 215
q
C,
Time: 40 seconds MAX. (200
q
C MIN.),
Number of times: 3, Number of days: not limited*
VP15-00-3
Wave soldering
Soldering bath temperature: 260
q
C MAX.,
Time: 10 seconds MAX., Number of times: 1,
Number of days: not limited*
WS60-00-1
Infrared ray reflow
Peak package’s surface temperature: 230
q
C below,
Reflow time: 30 seconds or below (210
q
C or higher),
Number of reflow process: 3, Exposure limit*: None
IR30-00-3
Partial heating method
Terminal temperature: 230
q
C or below,
Flow time: 10 seconds or below, Exposure limit*: None
*
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25
q
C and relative humidity at 65 % or less.
Note
Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION
Avoid high static voltage and electric fields, because this device is Hetero Junction
field effect transistor with shottky barrier gate.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE34018-TI-63-A | 制造商:CEL 制造商全稱:CEL 功能描述:GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) |
| NE34018-TI-64-A | 制造商:CEL 制造商全稱:CEL 功能描述:GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) |
| NE350184C | 功能描述:射頻GaAs晶體管 Low Noise HJ FET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE350184C(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| NE350184C-A | 功能描述:射頻GaAs晶體管 Low Noise HJ FET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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