參數(shù)資料
型號: NCV1124DG
廠商: ON Semiconductor
文件頁數(shù): 6/8頁
文件大?。?/td> 0K
描述: IC SENSOR DUAL VAR-RELUCT 8-SOIC
標(biāo)準(zhǔn)包裝: 98
類型: 可變磁阻
輸入類型: 邏輯
輸出類型: 邏輯
接口: 雙,串聯(lián)或并聯(lián)
電流 - 電源: 5mA
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 管件
產(chǎn)品目錄頁面: 1131 (CN2011-ZH PDF)
其它名稱: NCV1124DG-ND
NCV1124DGOS
NCV1124
http://onsemi.com
6
APPLICATION INFORMATION
Referring to Figure 2, the following will be a design
example given these system requirements:
RRS + 1.5 kW (u 12 kW is considered open)
VRS(MAX) + 120 Vpk
VRS(MIN) + 250 mVpk
FVRS + 10 kHz @ VRS(MIN) + 40 Vpkpk
1. Determine tradeoff between R1 value and power
rating. (use 1/2 watt package)
PD +
120
2
R1
t 1 2W
Set R1 = 15 k. (The clamp current will then be 120/15 k
= 8.0 mA, which is less than the 12 mA limit.)
2. Determine RAdj
Set RAdj as close to R1 + RRS as possible.
Therefore, RAdj = 17 k.
3. Determine VRS(+TRP) using equation (7).
VRS(+TRP) + 11mA
17 k
* 11mA(15 k ) 1.5 k) ) 160 m
VRS(+TRP) + 166 mV typical
(easily meets 250 mV minimum)
4. Calculate worst case VRS(+TRP)
Examination of equation (7) and the spec reveals the worst
case trip voltage will occur when:
VHYS = 180 mV
INAdj = 16 mA
INP1 = 15
mA
R1 = 14.25 k (5% low)
RAdj = 17.85 k (5% High)
VRS(+)MAX + 16 mA(17.85 k)
* 15mA(14.25 k ) 1.5 k) ) 180 mV
+ 229 mV
which is still less than the 250 mV minimum amplitude of
the input.
5. Calculate C1 for low pass filtering
Since the sensor guarantees 40 Vpkpk @ 10 kHz, a low
pass filter using R1 and C1 can be used to eliminate high
frequency noise without affecting system performance.
Gain Reduction
+ 0.29 V
20 V
+ 0.0145 +*36.7 dB
Therefore, a cutoff frequency, fC, of 145 Hz could be
used.
C1
v
1
2
pfCR1
v 0.07 mF
Set C1 = 0.047
mF.
6. Calculate the minimum RRS that will be indicated as
an open circuit. (DIAG = 5.0 V)
Rearranging equation (7) gives
RRS +
VHYS ) [INP1
KI
RAdj]
* VRS(+TRP)
INP1
* R1
But, VRS = 0 during this test, so it drops out.
Using the following as worst case Low and High:
Worst Case Low (RRS)
Worst Case High (RRS)
INAdj
23.6
mA = 15 mA × 1.57
10.7
mA = 7.0 mA × 1.53
RAdj
16.15 k
17.85 k
VHYS
135 mV
185 mV
INP1
16
mA
6.0
mA
R1
15.75 k
14.25 k
KI
1.57
1.53
RRS +
135 mV
) 23.6 mA
16.15 k
16
mA
* 15.75 k
+ 16.5 k
Therefore,
RRS(MIN) + 16.5 k (meets 12 k system spec)
and,
RRS(MAX) +
185 mV
) 10.7 mA
17.85 k
6.0
mA
* 14.25 k
+ 48.4 k
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