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參數(shù)資料
| 型號(hào)： | NCV1124DG |
| 廠商： | ON Semiconductor |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 0K |
| 描述： | IC SENSOR DUAL VAR-RELUCT 8-SOIC |
| 標(biāo)準(zhǔn)包裝： | 98 |
| 類型： | 可變磁阻 |
| 輸入類型： | 邏輯 |
| 輸出類型： | 邏輯 |
| 接口： | 雙，串聯(lián)或并聯(lián) |
| 電流 - 電源： | 5mA |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOICN |
| 包裝： | 管件 |
| 產(chǎn)品目錄頁(yè)面： | 1131 (CN2011-ZH PDF) |
| 其它名稱： | NCV1124DG-ND NCV1124DGOS |
NCV1124
http://onsemi.com
5
CIRCUIT DESCRIPTION
Figure 3 shows the part operating near the minimum input
thresholds. As the sin wave input threshold is increased, the
low side clamps become active (Figure 4). Increasing the
amplitude further (Figure 5), the highside clamp becomes
active. These internal clamps allow for voltages up to 250 V
and 250 V on the sensor side of the setup (with R1 = R2 =
22 k) (reference the diagram page 1).
Figure 6 shows the effect using the diagnostic (DIAG)
function has on the circuit. The input threshold (negative) is
switched from a threshold of 160 mV to +160 mV when
DIAG goes from a low to a high. There is no hysteresis when
DIAG is high.
Figure 3. Minimum Threshold Operation
IN1, 200 mV/div
OUT1, 2.0 V/div
20 ms/div
Figure 4. LowSide Clamp
IN1, 5.0 V/div
OUT1, 2.0 V/div
20 ms/div
Figure 5. Low and HighSide Clamps
IN1, 5.0 V/div
OUT1, 2.0 V/div
20 ms/div
Figure 6. Diagnostic Operation
DIAG
5.0 V/div
20 ms/div
IN1
1.0 V/div
OUT1
5.0 V/div
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