參數(shù)資料
型號: NAND512W4A0AV1
廠商: NUMONYX
元件分類: PROM
英文描述: 32M X 16 FLASH 3V PROM, 35 ns, PDSO48
封裝: 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48
文件頁數(shù): 16/57頁
文件大?。?/td> 916K
代理商: NAND512W4A0AV1
23/57
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Figure 13. Read (A,B,C) Operations
Figure 14. Read Block Diagrams
Note: 1. Highest address depends on device density.
CL
E
W
AL
R
I/O
RB
00h/
01h/ 50h
ai07595
Busy
Command
Code
Address Input
Data Output (sequentially)
tBLBH1
(read)
AI07596
A0-A7
A9-A26(1)
Area A
(1st half Page)
Read A Command, X8 Devices
Area B
(2nd half Page)
Area C
(Spare)
Area A
(main area)
Area C
(Spare)
A0-A7
Read A Command, X16 Devices
A0-A7
Read B Command, X8 Devices
Area A
(1st half Page)
Area B
(2nd half Page)
Area C
(Spare)
A0-A3 (x8)
A0-A2 (x16)
Read C Command, X8/x16 Devices
Area A
Area A/ B
Area C
(Spare)
A9-A26(1)
A4-A7 (x8), A3-A7 (x16) are don't care
相關(guān)PDF資料
PDF描述
NAND512W4A0BZA1F 32M X 16 FLASH 3V PROM, 35 ns, PBGA63
NAND512W4A0BZB1E 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
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NAND512R3A0AN6E 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
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