參數(shù)資料
型號(hào): NAND512W3B3CZA6E
廠(chǎng)商: NUMONYX
元件分類(lèi): PROM
英文描述: 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
封裝: 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63
文件頁(yè)數(shù): 29/59頁(yè)
文件大小: 998K
代理商: NAND512W3B3CZA6E
35/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Figure 21. Block Protection State Diagram
Note: PRL must be High for the software commands to be accepted.
AI08663b
Locked
Locked-Down
Unlocked in
Locked Area
Power-Up
Block Unlock
Command
Blocks Lock-Down
Command
WP VIL >100ns
Blocks Lock
Command
WP VIL >100ns
(start + end block address)
Unlocked in
Locked-Down
Area
Blocks Lock-Down
Command
WP VIL >100ns
相關(guān)PDF資料
PDF描述
NAND08GR3B2CZC6T 1G X 8 FLASH 1.8V PROM, 35 ns, PBGA63
NAND08GR3B3BZC6E 1G X 8 FLASH 1.8V PROM, 35 ns, PBGA63
NAND08GR3B3CN1E 1G X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND08GW4B2CZC1F 512M X 16 FLASH 3V PROM, 35 ns, PBGA63
NAND08GW4B3AZC6 512M X 16 FLASH 3V PROM, 35 ns, PBGA63
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND512W4A0AN6E 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512W4A0AZA6E 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 32MX16 12US 63VFBGA - Trays
NAND64GAH0HZA5F 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel
NAND64GW3FGAZN6F 制造商:Micron Technology Inc 功能描述:FULL CUSTOM MCP - Tape and Reel
NAND98R3M0CZBB5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays