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參數(shù)資料
| 型號： | NAND08GR3B3CN1E |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 1G X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 1/59頁 |
| 文件大小： | 998K |
| 代理商： | NAND08GR3B3CN1E |
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PRELIMINARY DATA
February 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
NAND512-B, NAND01G-B NAND02G-B
NAND04G-B NAND08G-B
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
FEATURES SUMMARY
■
HIGH DENSITY NAND FLASH MEMORIES
–
Up to 8 Gbit memory array
–
Up to 64Mbit spare area
–
Cost effective solutions for mass storage
applications
■
NAND INTERFACE
–
x8 or x16 bus width
–
Multiplexed Address/ Data
–
Pinout compatibility for all densities
■
SUPPLY VOLTAGE
–
1.8V device: VDD = 1.7 to 1.95V
–
3.0V device: VDD = 2.7 to 3.6V
■
PAGE SIZE
–
x8 device: (2048 + 64 spare) Bytes
–
x16 device: (1024 + 32 spare) Words
■
BLOCK SIZE
–
x8 device: (128K + 4K spare) Bytes
–
x16 device: (64K + 2K spare) Words
■
PAGE READ / PROGRAM
–
Random access: 25s (max)
–
Sequential access: 50ns (min)
–
Page program time: 300s (typ)
■
COPY BACK PROGRAM MODE
–
Fast page copy without external buffering
■
CACHE PROGRAM AND CACHE READ
MODES
–
Internal Cache Register to improve the
program and read throughputs
■
FAST BLOCK ERASE
–
Block erase time: 2ms (typ)
■
STATUS REGISTER
■
ELECTRONIC SIGNATURE
■
CHIP ENABLE ‘DON’T CARE’
–
for simple interface with microcontroller
■
AUTOMATIC PAGE 0 READ AT POWER-UP
–
Boot from NAND support
■
SERIAL NUMBER OPTION
Figure 1. Packages
■
DATA PROTECTION
–
Hardware and Software Block Locking
–
Hardware Program/Erase locked during
Power transitions
■
DATA INTEGRITY
–
100,000 Program/Erase cycles
–
10 years Data Retention
■
RoHS COMPLIANCE
–
Lead-Free Components are Compliant
with the RoHS Directive
■
DEVELOPMENT TOOLS
–
Error Correction Code software and
hardware models
–
Bad Blocks Management and Wear
Leveling algorithms
–
PC Demo board with simulation software
–
File System OS Native reference software
–
Hardware simulation models
TSOP48 12 x 20mm
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
LFBGA63 9.5 x 12 x 1.4mm
FBGA
USOP48 12 x 17 x 0.65mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND08GW4B2CZC1F | 512M X 16 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND08GW4B3AZC6 | 512M X 16 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND08GW4B3BN1T | 512M X 16 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND08GW4B3BN6E | 512M X 16 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND08GW4B3BN6T | 512M X 16 FLASH 3V PROM, 35 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND08GR3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GR3B4CZL6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B2AN6E | 功能描述:閃存 4 GBit 2112 Byte 1056 WP 1.8v/3v RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND08GW3B2AN6F | 功能描述:閃存 4 GB 2112B 1056 Word Pg 1.8V/3V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND08GW3B2BN6E | 制造商:Micron Technology Inc 功能描述:NAND & S.MEDIA FLASH - Trays |
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