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參數(shù)資料
| 型號： | NAND512W3A0CZB6 |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 |
| 封裝： | 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-55 |
| 文件頁數(shù)： | 50/57頁 |
| 文件大小： | 916K |
| 代理商： | NAND512W3A0CZB6 |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
54/57
APPENDIX A. HARDWARE INTERFACE EXAMPLES
Nand Flash devices can be connected to a micro-
controller system bus for code and data storage.
For microcontrollers that have an embedded
NAND controller the NAND Flash can be connect-
ed without the addition of glue logic (see
Figure 43.). However a minimum of glue logic is
required for general purpose microcontrollers that
do not have an embedded NAND controller. The
glue logic usually consists of a flip-flop to hold the
Chip Enable, Address Latch Enable and Com-
mand Latch Enable signals stable during com-
mand and address latch operations, and some
logic gates to simplify the firmware or make the de-
sign more robust.
Figure 44. gives an example of how to connect a
NAND Flash to a general purpose microcontroller.
The additional OR gates allow the microcontrol-
ler’s Output Enable and Write Enable signals to be
used for other peripherals. The OR gate between
A3 and CSn maps the flip-flop and NAND I/O in
different address spaces inside the same chip se-
lect unit, which improves the setup and hold times
and simplifies the firmware. The structure uses the
microcontroller DMA (Direct Memory Access) en-
gines to optimize the transfer between the NAND
Flash and the system RAM.
For any interface with glue logic, the extra delay
caused by the gates and flip-flop must be taken
into account. This delay must be added to the mi-
crocontroller’s AC characteristics and register set-
tings to get the NAND Flash setup and hold times.
For mass storage applications (hard disk emula-
tions or systems where a huge amount of storage
is required) NAND Flash memories can be con-
nected together to build storage modules (see Fig-
Figure 43. Connection to Microcontroller, Without Glue Logic
AI08045b
R
W
I/O
E
AL
CL
W
G
CSn
AD(24:16)
Microcontroller
NAND
Flash
DQ
WP
RB
PWAITEN
AD17
AD16
VDD
VDD or VSS
or General Purpose I/O
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| NAND128W4A2BZA1F | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND512W3A0AZA1E | 64M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
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| NAND512W3A0AV1E | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NAND512W3A2BE06 | 制造商:STMicroelectronics 功能描述:512 MBIT NAND FLASH MEMORY WAFER |
| NAND512W3A2BN6E | 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A2BN6F | 功能描述:閃存 NAND 512 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A2BZA6E | 功能描述:閃存 MEDIA FLSH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A2CE06 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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