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參數(shù)資料
| 型號： | NAND512W3A0CZB6 |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 |
| 封裝： | 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-55 |
| 文件頁數(shù)： | 13/57頁 |
| 文件大?。?/td> | 916K |
| 代理商： | NAND512W3A0CZB6 |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
20/57
DEVICE OPERATIONS
Pointer Operations
As the NAND Flash memories contain two differ-
ent areas for x16 devices and three different areas
for x8 devices (see Figure 11.) the read command
codes (00h, 01h, 50h) are used to act as pointers
to the different areas of the memory array (they se-
lect the most significant column address).
The Read A and Read B commands act as point-
ers to the main memory area. Their use depends
on the bus width of the device.
■
In x16 devices the Read A command (00h)
sets the pointer to Area A (the whole of the
main area) that is Words 0 to 255.
■
In x8 devices the Read A command (00h) sets
the pointer to Area A (the first half of the main
area) that is Bytes 0 to 255, and the Read B
command (01h) sets the pointer to Area B (the
second half of the main area) that is Bytes 256
to 511.
In both the x8 and x16 devices the Read C com-
mand (50h), acts as a pointer to Area C (the spare
memory area) that is Bytes 512 to 527 or Words
256 to 263.
Once the Read A and Read C commands have
been issued the pointer remains in the respective
areas until another pointer code is issued. Howev-
er, the Read B command is effective for only one
operation, once an operation has been executed
in Area B the pointer returns automatically to Area
A.
The pointer operations can also be used before a
program operation, that is the appropriate code
(00h, 01h or 50h) can be issued before the pro-
gram command 80h is issued (see Figure 12.).
Figure 11. Pointer Operations
AI07592
Area A
(00h)
A
Area B
(01h)
Area C
(50h)
Bytes 0- 255
Bytes 256-511
Bytes 512
-527
C
B
Pointer
(00h,01h,50h)
Page Buffer
Area A
(00h)
A
Area C
(50h)
Words 0- 255
Words 256
-263
C
Pointer
(00h,50h)
Page Buffer
x8 Devices
x16 Devices
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND128W4A0AZA1F | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND128W4A2BZA1F | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND512W3A0AZA1E | 64M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND512W3A2BN1E | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND512W3A0AV1E | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND512W3A2BE06 | 制造商:STMicroelectronics 功能描述:512 MBIT NAND FLASH MEMORY WAFER |
| NAND512W3A2BN6E | 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A2BN6F | 功能描述:閃存 NAND 512 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A2BZA6E | 功能描述:閃存 MEDIA FLSH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A2CE06 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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