參數(shù)資料
型號: NAND256W3A2BV1T
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 32M X 8 FLASH 3V PROM, 35 ns, PDSO48
封裝: 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48
文件頁數(shù): 49/57頁
文件大?。?/td> 916K
代理商: NAND256W3A2BV1T
53/57
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
PART NUMBERING
Table 28. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to ’1’.
For further information on any aspect of this device, please contact your nearest ST Sales Office.
Example:
NAND512R3A
0
A ZA
1
T
Device Type
NAND = NAND Flash Memory
Density
128 = 128Mb
256 = 256Mb
512 = 512Mb
01G = 1Gb
Operating Voltage
R = VDD = 1.7 to 1.95V
W = VDD = 2.7 to 3.6V
Bus Width
3 = x8
4 = x16
Family Identifier
A = 528 Bytes/ 264 Word Page
Device Options
0 = No Options
2 = Chip Enable Don’t Care Enabled
Product Version
A = First Version
B = Second Version
C = Third Version
Package
N = TSOP48 12 x 20mm (all devices)
V = USOP48 12 x 17 x 0.65mm (128Mbit, 256Mbit and 512Mbit devices)
ZA = VFBGA55 8 x 10 x 1mm, 6x8 ball array, 0.8mm pitch (128Mbit and 256Mbit devices)
ZB = TFBGA55 8 x 10 x 1.2mm, 6x8 ball array, 0.8mm pitch (512Mbit Dual Die devices)
ZA = VFBGA63 9 x 11 x 1mm, 6x8 ball array, 0.8mm pitch (512Mbit devices)
ZB = TFBGA63 9 x 11 x 1.2mm, 6x8 ball array, 0.8mm pitch (1Gbit Dual Die devices)
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
blank = Standard Packing
T = Tape & Reel Packing
E = Lead Free Package, Standard Packing
F = Lead Free Package, Tape & Reel Packing
相關(guān)PDF資料
PDF描述
NAND01GR4A2BN1T 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
NAND256W3A2CZA1E 32M X 8 FLASH 3V PROM, 35 ns, PBGA55
NAND01GR4A2AZB6 64M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND01GW3B2CN1E 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48
NAND04GR3B3AN6 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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NAND256W3A2BZA6 制造商:STMicroelectronics 功能描述:
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