參數(shù)資料
型號(hào)： NAND256R4A3AZA1T
廠商： STMICROELECTRONICS
元件分類(lèi)： PROM
英文描述： 16M X 16 FLASH 1.8V PROM, 10000 ns, PBGA55
封裝： 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-55
文件頁(yè)數(shù)： 51/56頁(yè)
文件大?。?/td> 882K
代理商： NAND256R4A3AZA1T
55/56
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
RELATED DOCUMENTATION
STMicroelectronics has published a set of application notes to support the NAND Flash memories. They
are available from the ST Website
www.st.com. or from your local ST Distributor.
REVISION HISTORY
Table 29. Document Revision History
Date
Version
Revision Details
06-Jun-2003
1.0
First Issue
07-Aug-2003
2.0
Design Phase
27-Oct-2003
3.0
Engineering Phase
03-Dec-2003
4.0
Document promoted from Target Specification to Preliminary Data status.
VCC changed to VDD and ICC to IDD.
Title of Table 2.. changed to “Product Description” and Page Program Typical Timing
for NANDXXXR3A devices corrected. Table 1., Product List, inserted on page 2.
13-Apr-2004
5.0
WSOP48 and VFBGA55 packages added, VFBGA63 (9 x 11 x 1mm) removed.
Figure 19., Cache Program Operation, modified and note 2 modified. Note removed
Meaning of tBLBH4 modified, partly replaced by tWHBH1 and tWHRL min for 3V devices
References removed from RELATED DOCUMENTATION section and reference
made to ST Website instead.
Note 3 to Table 7., Address Insertion, x16 Devices removed. Only 00h Pointer
operations are valid before a Cache Program operation. IDD4 removed from Table
Waveform. Small text changes.
28-May-2004
6.0
TFBGA55 package added (mechanical data to be announced). 512Mb Dual Die
devices added. Figure 19., Cache Program Operation modified.
Package code changed for TFBGA63 8.5 x 15 x 1.2mm, 6x8 ball array, 0.8mm pitch
(1Gbit Dual Die devices) in Table 28., Ordering Information Scheme.
02-Jul-2004
7.0
Cache Program removed from document. TFBGA55 package specifications added
Test
conditions
modified
for
VOL and VOH parameters in Table 19., DC
相關(guān)PDF資料
PDF描述
NAND128W4A1AZA6T 8M X 16 FLASH 3V PROM, 10000 ns, PBGA55
NAND128W4A3AN6E 8M X 16 FLASH 3V PROM, 10000 ns, PDSO48
NAND128W4A1AV6 8M X 16 FLASH 3V PROM, 10000 ns, PDSO48
NAND512R3M0BZBE SPECIALTY MEMORY CIRCUIT, PBGA107
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND256W3A0AN6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND256W3A0AN6E 功能描述:閃存 2.7-3.6V 256M(32Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND256W3A0AN6F 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND256W3A0AZA6E 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 55VFBGA - Trays
NAND256W3A0AZA6F 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 55VFBGA - Tape and Reel
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