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參數(shù)資料
| 型號： | NAND128W3A0CZB1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| 中文描述： | 128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片 |
| 文件頁數(shù)： | 33/57頁 |
| 文件大小： | 410K |
| 代理商： | NAND128W3A0CZB1 |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in
Ta-
ble 14.
Table 14. Program, Erase Times and Program Erase Endurance Cycles
MAXIMUM RATING
Stressing the device above the ratings listed in
Ta-
ble 15., Absolute Maximum Ratings
, may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
reliability.
Refer
STMicroelectronics SURE Program and other rel-
evant quality documents.
also
to
the
Table 15. Absolute Maximum Ratings
Note: 1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may over-
shoot to V
DD
+ 2V for less than 20ns during transitions on I/O pins.
Parameters
NAND Flash
Unit
Min
Typ
Max
Page Program Time
200
500
μs
Block Erase Time
2
3
ms
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
10
years
Symbol
Parameter
Value
Unit
Min
Max
T
BIAS
Temperature Under Bias
–
50
125
°C
T
STG
Storage Temperature
–
65
150
°C
V
IO
(1)
Input or Output Voltage
1.8V devices
–
0.6
2.7
V
3 V devices
–
0.6
4.6
V
V
DD
Supply Voltage
1.8V devices
–
0.6
2.7
V
3 V devices
–
0.6
4.6
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND512W4M5CZC5E | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| NAND512R4M2CZB5E | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| NAND512W3M5BZB5F | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| NAS-xxx | SEMI-PRECISION POWER WIREWOUND RESISTOR |
| NASxxx | SEMI-PRECISION POWER WIREWOUND RESISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND128W3A2BDI6 | 制造商:Micron Technology Inc 功能描述:NAND 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND128W3A2BN6E | 功能描述:閃存 NAND 128 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND128W3A2BN6F | 功能描述:閃存 NAND 128 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND128W3A2BND | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND128W3A2BWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
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