參數(shù)資料
型號(hào)： NAND08GW4B3BN6T
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 512M X 16 FLASH 3V PROM, 35 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP-48
文件頁(yè)數(shù)： 28/59頁(yè)
文件大?。?/td> 998K
代理商： NAND08GW4B3BN6T
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
34/59
Blocks Lock-Down
The Lock-Down feature provides an additional lev-
el of protection. A Locked-down block cannot be
unlocked by a software command. Locked-Down
blocks can only be unlocked by setting the Write
Protect signal to Low for a minimum of 100ns.
Only locked blocks can be locked-down. The com-
mand has no affect on unlocked blocks.
forms for details on how to issue the command.
Block Lock Status
In Block Lock mode (PRL High) the Block Lock
Status of each block can be checked by issuing a
Read Block Lock Status command (see Table
The command consists of:
■
one bus cycle to give the command code
■
three bus cysles to give the block address
After this, a read cycle will then output the Block
Lock Status on the I/O pins on the falling edge of
Chip Enable or Read Enable, whichever occurs
last. Chip Enable or Read Enable do not need to
be toggled to update the status.
The Read Block Lock Status command will not be
accepted while the device is busy (RB Low).
The device will remain in Read Block Lock Status
mode until another command is issued.
If the device is not in the Block Lock mode (PRL
Low) the Block Status can be read in the Status
Register using the Read Status Register com-
mand.
Figure 20. Read Block Lock Status Operation
Note: Three address cycles are required for 2,4 and 8 Gb devices. The 512Mb and 1Gb devices only require two address cycles.
Table 16. Block Lock Status
Note: X = Don’t Care.
Status
I/O7-I/O3
I/O2
I/O1
I/O0
Locked
X
0
1
0
Unlocked
X
1
0
Locked-Down
X
0
1
Unlocked in Locked-
Down Area
X1
0
1
I/O
R
Block Address, 3 cycles
ai08669
7Ah
Read Block Lock
Status Command
Add1
Add2
Add3
Dout
Block Lock Status
tWHRL
W
相關(guān)PDF資料
PDF描述
NAND08GR3B2AN1F 1G X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND04GW4B2AN1E 256M X 16 FLASH 3V PROM, 35 ns, PDSO48
NAND02GW4B2AN1T 128M X 16 FLASH 3V PROM, 35 ns, PDSO48
NAND04GR4B2CN1F 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND128W3A0AN6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND128W3A0AN6E 功能描述:閃存 2.7-3.6V 128M(16Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND128W3A0AN6F 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND128W3A0BN6E 功能描述:閃存 2.7-3.6V 128M(16Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND128W3A0BN6F 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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