參數(shù)資料
型號(hào)： NAND04GR3B3BN1F
廠商： NUMONYX
元件分類： PROM
英文描述： 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
封裝： 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁數(shù)： 58/59頁
文件大?。?/td> 998K
代理商： NAND04GR3B3BN1F
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
8/59
Table 2. Product Description
Note: 1. Both Single and Dual Die devices.
2. Dual Die devices only.
Figure 2. Logic Block Diagram
Reference
Part Number
Density
Bus
Width
Page
Size
Block
Size
Memory
Array
Operating
Voltage
Timings
Packages
Random
Access
(max)
Sequential
Access
(min)
Page
Program
(typ)
Block
Erase (typ)
NAND512-B
NAND512R3B
512Mbit
x8
2048+64
Bytes
128K+4K
Bytes
64 Pages x
512 Blocks
1.7 to 1.95V
25s
60ns
300s
2ms
TSOP48
USOP48
VFBGA63
NAND512W3B
2.7 to 3.6V
25s
50ns
300s
NAND512R4B
x16
1024+32
Words
64K+2K
Words
1.7 to 1.95V
25s
60ns
300s
NAND512W4B
2.7 to 3.6V
25s
50ns
300s
NAND01G-B
NAND01GR3B
1Gbit
x8
2048+64
Bytes
128K+4K
Bytes
64 Pages x
1024 Blocks
1.7 to 1.95V
25s
60ns
300s
2ms
TSOP48
USOP48
VFBGA63
NAND01GW3B
2.7 to 3.6V
25s
50ns
300s
NAND01GR4B
x16
1024+32
Words
64K+2K
Words
1.7 to 1.95V
25s
60ns
300s
NAND01GW4B
2.7 to 3.6V
25s
50ns
300s
NAND02G-B
NAND02GR3B
2Gbit
x8
2048+64
Bytes
128K+4K
Bytes
64 Pages x
2048 Blocks
1.7 to 1.95V
25s
60ns
300s
2ms
TSOP48(1)
TFBGA63(2)
NAND02GW3B
2.7 to 3.6V
25s
50ns
300s
NAND02GR4B
x16
1024+32
Words
64K+2K
Words
1.7 to 1.95V
25s
60ns
300s
NAND02GW4B
2.7 to 3.6V
25s
50ns
300s
NAND04G-B
NAND04GR3B
4Gbit
x8
2048+64
Bytes
128K+4K
Bytes
64 Pages x
4096 Blocks
1.7 to 1.95V
25s
60ns
300s
2ms
TSOP48
NAND04GW3B
2.7 to 3.6V
25s
50ns
300s
NAND04GR4B
x16
1024+32
Words
64K+2K
Words
1.7 to 1.95V
25s
60ns
300s
NAND04GW4B
2.7 to 3.6V
25s
50ns
300s
NAND08G-B
NAND08GR3B
8Gbit
x8
2048+64
Bytes
128K+4K
Bytes
64 Pages x
8192 Blocks
1.7 to 1.95V
25s
60ns
300s
2ms
TSOP48
LFBGA63
NAND08GW3B
2.7 to 3.6V
25s
50ns
300s
NAND08GR4B
x16
1024+32
Words
64K+2K
Words
1.7 to 1.95V
25s
60ns
300s
NAND08GW4B
2.7 to 3.6V
25s
50ns
300s
Address
Register/Counter
Command
Interface
Logic
P/E/R Controller,
High Voltage
Generator
WP
I/O Buffers & Latches
I/O8-I/O15, x16
E
W
AI09373b
R
Y Decoder
Page Buffer
NAND Flash
Memory Array
X
Decoder
I/O0-I/O7, x8/x16
Command Register
CL
AL
Cache Register
RB
PRL
相關(guān)PDF資料
PDF描述
NAND512W3B3BN1E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3B3CN6E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3B3CZA6E 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND08GR3B2CZC6T 1G X 8 FLASH 1.8V PROM, 35 ns, PBGA63
NAND08GR3B3BZC6E 1G X 8 FLASH 1.8V PROM, 35 ns, PBGA63
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND04GR4B2DWFD 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND04GR4B2EN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND04GR4B2EN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND04GW3B2AN6E 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 4GBIT 512MX8 25US 48TSOP - Trays
NAND04GW3B2BE06 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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