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參數(shù)資料
| 型號(hào)： | NAND04GR3B3BN1F |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件頁(yè)數(shù)： | 28/59頁(yè) |
| 文件大小： | 998K |
| 代理商： | NAND04GR3B3BN1F |
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NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
34/59
Blocks Lock-Down
The Lock-Down feature provides an additional lev-
el of protection. A Locked-down block cannot be
unlocked by a software command. Locked-Down
blocks can only be unlocked by setting the Write
Protect signal to Low for a minimum of 100ns.
Only locked blocks can be locked-down. The com-
mand has no affect on unlocked blocks.
Refer to Figure 25., Command Latch AC Wave-
forms for details on how to issue the command.
Block Lock Status
In Block Lock mode (PRL High) the Block Lock
Status of each block can be checked by issuing a
Read Block Lock Status command (see Table
The command consists of:
■
one bus cycle to give the command code
■
three bus cysles to give the block address
After this, a read cycle will then output the Block
Lock Status on the I/O pins on the falling edge of
Chip Enable or Read Enable, whichever occurs
last. Chip Enable or Read Enable do not need to
be toggled to update the status.
The Read Block Lock Status command will not be
accepted while the device is busy (RB Low).
The device will remain in Read Block Lock Status
mode until another command is issued.
If the device is not in the Block Lock mode (PRL
Low) the Block Status can be read in the Status
Register using the Read Status Register com-
mand.
Figure 20. Read Block Lock Status Operation
Note: Three address cycles are required for 2,4 and 8 Gb devices. The 512Mb and 1Gb devices only require two address cycles.
Table 16. Block Lock Status
Note: X = Don’t Care.
Status
I/O7-I/O3
I/O2
I/O1
I/O0
Locked
X
0
1
0
Unlocked
X
1
0
Locked-Down
X
0
1
Unlocked in Locked-
Down Area
X1
0
1
I/O
R
Block Address, 3 cycles
ai08669
7Ah
Read Block Lock
Status Command
Add1
Add2
Add3
Dout
Block Lock Status
tWHRL
W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND512W3B3BN1E | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND512W3B3CN6E | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND512W3B3CZA6E | 64M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND08GR3B2CZC6T | 1G X 8 FLASH 1.8V PROM, 35 ns, PBGA63 |
| NAND08GR3B3BZC6E | 1G X 8 FLASH 1.8V PROM, 35 ns, PBGA63 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND04GR4B2DWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND04GR4B2EN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND04GR4B2EN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND04GW3B2AN6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 4GBIT 512MX8 25US 48TSOP - Trays |
| NAND04GW3B2BE06 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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