參數(shù)資料
型號(hào)： NAND01GW4B3CZA1E
廠商： NUMONYX
元件分類： PROM
英文描述： 64M X 16 FLASH 3V PROM, 35 ns, PBGA63
封裝： 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63
文件頁(yè)數(shù)： 53/59頁(yè)
文件大?。?/td> 998K
代理商： NAND01GW4B3CZA1E
57/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
PART NUMBERING
Table 31. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to ’1’. For further
information on any aspect of this device, please contact your nearest ST Sales Office.
Example:
NAND02GR3B
2
A ZA
1
T
Device Type
NAND Flash Memory
Density
512 = 512Mb
01G = 1Gb
02G = 2Gb
04G = 4Gb
08G = 8Gb
Operating Voltage
R = VDD = 1.7 to 1.95V
W = VDD = 2.7 to 3.6V
Bus Width
3 = x8
4 = x16
Family Identifier
B = 2112 Bytes/ 1056 Word Page
Device Options
2 = Chip Enable Don't Care Enabled
3 = Chip Enable Don't Care Enabled and Automatic Page 0 Read at Power-up
Product Version
A = First Version
B= Second Version
C= Third Version
Package
N = TSOP48 12 x 20mm (all devices)
V = USOP48 12 x 17 x 0.65mm (512Mb and 1Gb devices)
ZA = VFBGA63 9.5 x 12 x 1mm, 0.8mm pitch (512Mb and 1Gb devices)
ZB = TFBGA63 9.5 x 12 x 1.2mm, 0.8mm pitch (2Gb Dual Die devices)
ZC = LFBGA63 9.5 x 12 x 1.4mm, 0.8mm pitch (8Gb Quadruple Die devices)
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
blank = Standard Packing
T = Tape & Reel Packing
E = Lead Free Package, Standard Packing
F = Lead Free Package, Tape & Reel Packing
相關(guān)PDF資料
PDF描述
NAND08GR4B2AZC6E 512M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND512R3B3CZA6 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
NAND01GR4B3CZA1E 64M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND01GR4B3CZA6E 64M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND01GW4B3BN6T 64M X 16 FLASH 3V PROM, 35 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GW4BZA6 制造商:Micron Technology Inc 功能描述:1G, 3V, NAND, VFBGA63, IND - Trays
NAND01GW4M0AZB5E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GW4M0AZB5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GW4M0AZC5E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GW4M0AZC5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
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