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參數(shù)資料
| 型號(hào)： | NAND01GW3A2AN1 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| 封裝： | 12 X 20 MM, PLASTIC, TSOP-48 |
| 文件頁(yè)數(shù)： | 1/57頁(yè) |
| 文件大小： | 916K |
| 代理商： | NAND01GW3A2AN1 |
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February 2005
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
■
HIGH DENSITY NAND FLASH MEMORIES
–
Up to 1 Gbit memory array
–
Up to 32 Mbit spare area
–
Cost effective solutions for mass storage
applications
■
NAND INTERFACE
–
x8 or x16 bus width
–
Multiplexed Address/ Data
–
Pinout compatibility for all densities
■
SUPPLY VOLTAGE
–
1.8V device: VDD = 1.7 to 1.95V
–
3.0V device: VDD = 2.7 to 3.6V
■
PAGE SIZE
–
x8 device: (512 + 16 spare) Bytes
–
x16 device: (256 + 8 spare) Words
■
BLOCK SIZE
–
x8 device: (16K + 512 spare) Bytes
–
x16 device: (8K + 256 spare) Words
■
PAGE READ / PROGRAM
–
Random access: 12s (max)
–
Sequential access: 50ns (min)
–
Page program time: 200s (typ)
■
COPY BACK PROGRAM MODE
–
Fast page copy without external buffering
■
FAST BLOCK ERASE
–
Block erase time: 2ms (Typ)
■
STATUS REGISTER
■
ELECTRONIC SIGNATURE
■
CHIP ENABLE ‘DON’T CARE’ OPTION
–
Simple interface with microcontroller
■
SERIAL NUMBER OPTION
■
HARDWARE DATA PROTECTION
–
Program/Erase locked during Power
transitions
Figure 1. Packages
■
DATA INTEGRITY
–
100,000 Program/Erase cycles
–
10 years Data Retention
■
RoHS COMPLIANCE
–
Lead-Free Components are Compliant
with the RoHS Directive
■
DEVELOPMENT TOOLS
–
Error Correction Code software and
hardware models
–
Bad Blocks Management and Wear
Leveling algorithms
–
File System OS Native reference software
–
Hardware simulation models
TSOP48 12 x 20mm
VFBGA55 8 x 10 x 1mm
TFBGA55 8 x 10 x 1.2mm
VFBGA63 9 x 11 x 1mm
TFBGA63 9 x 11 x 1.2mm
FBGA
USOP48 12 x 17 x 0.65mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND01GW3A2AZB1E | 128M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND01GW3A0CZB1 | 128M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND01GW3A2BN6T | 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND01GW3A2CN6T | 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND01GW3A2AN1F | 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND01GW3A2AN1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW3A2AN1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW3A2AN1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW3A2AN6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW3A2AN6E | 功能描述:IC FLASH 1GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
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