參數(shù)資料
型號： NAND01GW3A2AN1F
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 128M X 8 FLASH 3V PROM, 35 ns, PDSO48
封裝： 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁數(shù)： 1/57頁
文件大小： 916K
代理商： NAND01GW3A2AN1F
1/57
February 2005
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
■
HIGH DENSITY NAND FLASH MEMORIES
–
Up to 1 Gbit memory array
–
Up to 32 Mbit spare area
–
Cost effective solutions for mass storage
applications
■
NAND INTERFACE
–
x8 or x16 bus width
–
Multiplexed Address/ Data
–
Pinout compatibility for all densities
■
SUPPLY VOLTAGE
–
1.8V device: VDD = 1.7 to 1.95V
–
3.0V device: VDD = 2.7 to 3.6V
■
PAGE SIZE
–
x8 device: (512 + 16 spare) Bytes
–
x16 device: (256 + 8 spare) Words
■
BLOCK SIZE
–
x8 device: (16K + 512 spare) Bytes
–
x16 device: (8K + 256 spare) Words
■
PAGE READ / PROGRAM
–
Random access: 12s (max)
–
Sequential access: 50ns (min)
–
Page program time: 200s (typ)
■
COPY BACK PROGRAM MODE
–
Fast page copy without external buffering
■
FAST BLOCK ERASE
–
Block erase time: 2ms (Typ)
■
STATUS REGISTER
■
ELECTRONIC SIGNATURE
■
CHIP ENABLE ‘DON’T CARE’ OPTION
–
Simple interface with microcontroller
■
SERIAL NUMBER OPTION
■
HARDWARE DATA PROTECTION
–
Program/Erase locked during Power
transitions
Figure 1. Packages
■
DATA INTEGRITY
–
100,000 Program/Erase cycles
–
10 years Data Retention
■
RoHS COMPLIANCE
–
Lead-Free Components are Compliant
with the RoHS Directive
■
DEVELOPMENT TOOLS
–
Error Correction Code software and
hardware models
–
Bad Blocks Management and Wear
Leveling algorithms
–
File System OS Native reference software
–
Hardware simulation models
TSOP48 12 x 20mm
VFBGA55 8 x 10 x 1mm
TFBGA55 8 x 10 x 1.2mm
VFBGA63 9 x 11 x 1mm
TFBGA63 9 x 11 x 1.2mm
FBGA
USOP48 12 x 17 x 0.65mm
相關(guān)PDF資料
PDF描述
NAND128R3A0AZA1T 16M X 8 FLASH 1.8V PROM, 35 ns, PBGA55
NAND128W3A0AN6F 16M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND128W3A0AV6F 16M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND01GR4A2BZB1F 64M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND01GR4A2CZB1E 64M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GW3A2AN1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW3A2AN6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW3A2AN6E 功能描述:IC FLASH 1GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
NAND01GW3A2AN6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW3A2AN6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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