參數(shù)資料
型號(hào)： NAND01GR4B2CV6T
廠商： STMICROELECTRONICS
元件分類(lèi)： PROM
英文描述： 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48
封裝： 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48
文件頁(yè)數(shù)： 8/58頁(yè)
文件大?。?/td> 943K
代理商： NAND01GR4B2CV6T
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
16/58
Table 6. Address Insertion, x8 Devices
Note: 1. Any additional address input cycles will be ignored.
2. The fifth cycle is valid for 2Gb, 4Gb and 8Gb devices. A28 is for 2Gb devices, A29-A28 are for 4Gb devices and A30-A28 for 8Gb
devices only.
Table 7. Address Insertion, x16 Devices
Note: 1. Any additional address input cycles will be ignored.
2. The fifth cycle is valid for 2Gb, 4Gb and 8Gb devices. A27 is for 2Gb devices, A28-A27 are for 4Gb devices and A29-A27 for 8Gb
devices.
Bus Cycle
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
A7
A6
A5
A4
A3
A2
A1
A0
2nd
VIL
A11
A10
A9
A8
3rd
A19
A18
A17
A16
A15
A14
A13
A12
4th
A27
A26
A25
A24
A23
A22
A21
A20
5th(2)
VIL
A30
A29
A28
Bus
Cycle
I/O8-
I/O15
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
X
A7
A6
A5
A4
A3
A2
A1
A0
2nd
X
VIL
A10
A9
A8
3rd
X
A18
A17
A16
A15
A14
A13
A12
A11
4th
X
A26
A25
A24
A23
A22
A21
A20
A19
5th(2)
X
VIL
A29
A28
A27
相關(guān)PDF資料
PDF描述
NAND01GR4B2CZA1E 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
NAND01GW3A0BZB1 128M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND512R4A2CZB6E 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND512R4A0BZA6 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND512R4A0BZB6 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GR4B2CZA1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA1E 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZA1F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZA6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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