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參數(shù)資料
| 型號(hào)： | NAND01GR3A1AN1T |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| 封裝： | 12 X 20 MM, PLASTIC, TSOP-48 |
| 文件頁(yè)數(shù)： | 18/56頁(yè) |
| 文件大小： | 882K |
| 代理商： | NAND01GR3A1AN1T |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Block Erase
Erase operations are done one block at a time. An
erase operation sets all of the bits in the ad-
dressed block to ‘1’. All previous data in the block
is lost.
An erase operation consists of three steps (refer to
1.
One bus cycle is required to setup the Block
Erase command.
2.
Only three bus cycles for 512Mb and 1Gb
devices, or two for 128Mb and 256Mb devices
are required to input the block address. The
first cycle (A0 to A7) is not required as only
addresses A14 to A26 (highest address
depends on device density) are valid, A9 to
A13 are ignored. In the last address cycle I/O0
to I/O7 must be set to VIL.
3.
One bus cycle is required to issue the confirm
Once the erase operation has completed the Sta-
tus Register can be checked for errors.
Figure 19. Block Erase Operation
Reset
The Reset command is used to reset the Com-
mand Interface and Status Register. If the Reset
command is issued during any operation, the op-
eration will be aborted. If it was a program or erase
operation that was aborted, the contents of the
memory locations being modified will no longer be
valid as the data will be partially programmed or
erased.
If the device has already been reset then the new
Reset command will not be accepted.
The Ready/Busy signal goes Low for tBLBH4 after
the Reset command is issued. The value of tBLBH4
depends on the operation that the device was per-
forming when the command was issued, refer to
Table 21. for the values.
I/O
RB
Block Address
Inputs
SR0
ai07593
D0h
70h
60h
Block Erase
Setup Code
Confirm
Code
Read Status Register
Busy
tBLBH3
(Erase Busy time)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND01GR3A3AN1T | 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND01GR4A3AZB6F | 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63 |
| NAND01GW4A3AN1T | 64M X 16 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND01GW4A1AZB1E | 64M X 16 FLASH 3V PROM, 12000 ns, PBGA63 |
| NAND256W3A1AV1T | 32M X 8 FLASH 3V PROM, 10000 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND01GR3A2AN1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR3A2AN1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR3A2AN1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR3A2AN1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR3A2AN6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
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