參數(shù)資料
型號(hào): MX26L12811MC
廠商: Electronic Theatre Controls, Inc.
英文描述: 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY
中文描述: 128M的[x8/x16]單3V頁(yè)面模式中期記憶
文件頁(yè)數(shù): 8/32頁(yè)
文件大?。?/td> 265K
代理商: MX26L12811MC
8
P/N:PM0990
REV. 1.0, OCT. 29, 2003
MX26L12811MC
NOTES:
1. Bus operations are defined in Table 1.
2. X = Any valid address within the device.
BA = Address within the block.
IA = Identifier Code Address: see Figure 2 and Table 13.
QA = Query database Address.
PA = Address of memory location to be programmed.
RCD = Data to be written to the read configuration register. This data is presented to the device on A15~A0 ; all
other address inputs are ignored.
3. ID = Data read from Identifier Codes.
QD = Data read from Query database.
SRD = Data read from status register. See Table 14 for a description of the status register bits.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE.
CC = Configuration Code.
4. The upper byte of the data bus (Q8-Q15) during command writes is a "Don't Care" in x16 operation.
5. Following the Read Identifier Codes command, read operations access manufacturer, device and block lock
codes. See Section 4.3 for read identifier code data.
6. If the WSM is running, only Q7 is valid; Q15-Q8 and Q6-Q0 float, which places them in a high impedance state.
7. After the Write to Buffer command is issued check the XSR to make sure a buffer is available for writing.
8. The number of bytes/words to be written to the Write Buffer = N + 1, where N = byte/word count argument.
Count ranges on this device for byte mode are N = 00H to N = 1FH and for word mode are N = 0000H to N =000FH.
The third and consecutive bus cycles, as determined by N, are for writing data into the Write Buffer.
The Confirm command (D0H) is expected after exactly N + 1 write cycles; any other command at that point in the
sequence aborts the write to buffer operation. Please see Figure 4. "Write to Buffer Flowchart" for additional
information.
9. The write to buffer or erase operation does not begin until a Confirm command (D0h) is issued.
10.Attempts to issue a block erase or program to a locked block.
11.Either 40H or 10H are recognized by the WSM as the byte/word program setup.
12.The clear block lock-bits operation simultaneously clears all block lock-bits.
相關(guān)PDF資料
PDF描述
MX26L12811MC-12 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY
MX28F128J3 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29LV017AXEC-90 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
MX29LV017ATI-70 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX26L12811MC-12 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY
MX26L1620 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L1620MC-12 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L1620MC-90 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L1620MI-12 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM