參數(shù)資料
型號: MX26L12811MC
廠商: Electronic Theatre Controls, Inc.
英文描述: 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY
中文描述: 128M的[x8/x16]單3V頁面模式中期記憶
文件頁數(shù): 24/32頁
文件大?。?/td> 265K
代理商: MX26L12811MC
24
P/N:PM0990
REV. 1.0, OCT. 29, 2003
MX26L12811MC
Versions
(All units in ns unless otherwise noted)
Sym
Parameter
VCC
VCCQ
Notes
3.0V-3.6V(3)
3.0V-3.6V(3)
Min
Max
tAVAV
Read/Write Cycle Time
120
tAVQV
Address to Output Delay
120
tELQV
CEX to Output Delay
120
tGLQV
OE to Non-Array Output Delay
2, 4
50
tELQX
CEX to Output in Low Z
5
0
tGLQX
OE to Output in Low Z
5
0
tEHQZ
CEX High to Output in High Z
5
35
tGHQZ
OE High to Output in High Z
5
15
tOH
Output Hold from Address, CEX, or OE
5
0
Change, Whichever Occurs First
tEHEL
CEx High to CEx Low
5
0
tAPA
Page Address Access Time
5, 6
25
tGLQV
OE to Array Output Delay
4
25
AC Characteristics --Read-Only Operations (1,2)
NOTES:CEX low is defined as the first edge of CE that enables the device. CEX high is defined at the first edge of CE
that disables the device (see Table 2).
1. See AC Input/Output Reference Waveforms for the maximum allowable input slew rate.
2. OE may be delayed up to t ELQV -t GLQV after the first edge of CE that enables the device (see Table 2) without
impact on t ELQV .
3. See Figures 10-11, Transient Input/Output Reference Waveform for VCCQ = 3.0V - 3.6V, and Transient Equivalent
Testing Load Circuit for testing characteristics.
4. When reading the MTP array a faster tGLQV (R15) applies. Non-array reads refer to status register reads, query
reads, or device identifier reads.
5. Sampled, not 100% tested.
6. For devices configured to standard word/byte read mode, R14 (tAPA) will equal R1 (tAVQV).
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