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參數(shù)資料
| 型號(hào)： | MWT-PH16 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | DIE-15 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 518K |
| 代理商： | MWT-PH16 |
MwT- PH16
28 GHz Medium Power AlGaAs/InGaAs PHEMT
June 2004
Chip Dimensions: 1,067 x 241 microns
Chip Thickness: 100 microns
Features:
+30.0 dBm typical Output Power at 12 GHz
11.5 dB typical Small Signal Gain at 12 GHz
60% typical PAE at 12 GHz
0.3 x 900 Micron Refractory Metal/Gold Gate
Sorted into 15 mA Idss Bin Ranges
Excellent for High Power, Gain, and High Power Added Efficiency
Ideal for Commercial, Military, Hi-Rel Space Applications
The MwT-PH16 is a AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose
nominal 0.3 micron gate length and 900 micron gate width make it ideally suited for applications requiring
high-gain and power up to 28 GHz frequency range with power outputs ranging from 800 to 1000 milli-watts.
The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip
is produced using MwT's reliable metal systems and all devices from each wafer are screened to insure
reliability. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for increased
durability.
RF Specifications at Ta= 25 °C
SYMBOL
PARAMETERS & CONDITIONS
FREQ
UNITS
MIN
TYP
P1dB
Output Power at 1dB Compression
Vds=7.0 V Ids=0.75xIDSS=195 mA
12 GHz
dBm
28.5
30.0
SSG
Small Signal Gain
VDS=7.0 V Ids=0.75xIDSS=195 mA
12 GHz
dB
10.0
11.5
PAE
Power Added Effiency at P1dB
VDS=7.0 V Ids=0.75xIDSS=195 mA
12 GHz
%
60
IDSS
Recommended IDSS Range
for Optimum P1dB
mA
180-
315
All Specifications subject to change without notice
4268 Solar Way, Fremont, CA 94538, USA; PHONE: 510-651-6700; FAX: 510-651-2208; Website: www.mwtinc.com; Email:info@mwtinc.com
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