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參數(shù)資料
| 型號： | MWT-PH5 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 52K |
| 代理商： | MWT-PH5 |
MwT-PH5
30 GHz High Gain, Dual Gate AlGaAs/InGaAs PHEMT
Preliminary Data Sheet
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Features:
18.0 dB typical Small Signal Gain at 12 GHz
+20.0 dBm typical Output Power at 12 GHz
2 x 0.3 x 300 Micron Refractory Metal/Gold Gate
Sorted into 5 mA Idss Bin Ranges
Excellent for High Gain and Medium Power
Applications
Ideal for Commercial, Military, Hi-Rel Space
Applications
Chip Dimensions: 406 x 241 microns
Chip Thickness: 100 microns
Description:
The MwT-PH5 is a dual gate AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal
0.3 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and power up to 30
GHz frequency range. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The
chip is produced using MwT's reliable metal systems and all devices from each wafer are screened to insure reliability. All chips
are passivated using MwT's patented "Diamond-Like Carbon" process for increased durability.
Electrical Specifications:
at Ta= 25
°C
SYMBOL
PARAMETERS & CONDITIONS
FREQ
UNITS
MIN
TYP
P1dB
Output Power at 1dB Compression
Vds=7.0 V Ids=0.6xIDSS=48 mA
12 GHz
dBm
18.0
20.0
SSG
Small Signal Gain
VDS=7.0 V Ids=0.6xIDSS=48 mA
12 GHz
dB
15.0
18.0
PAE
Power Added Efficiency at P1dB
VDS=7.0 V Ids=0.6xIDSS=48 mA
12 GHz
%
30
NFopt
Optimum Noise Figure
Vds=3.0 V Ids=20 mA
12 GHz
dB
2.0
GA
Small Signal Gain
Vds=3.0 V Ids=20 mA
12 GHz
dB
12.0
IDSS
Recommended IDSS Range
for Optimum P1dB
mA
40-
120
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