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參數(shù)資料
| 型號(hào)： | MWT-PH770 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 70 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | MWT-PH770 |
MwT-PH7
28 GHz Medium Power AlGaAs/InGaAs PHEMT
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Features:
+24.0 dBm typical Output Power at 12 GHz
13.5 dB typical Small Signal Gain at 12 GHz
60% typical PAE at 12 GHz
0.3 x 250 Micron Refractory Metal/Gold Gate
Sorted into 4 mA Idss Bin Ranges
Excellent for High Power, Gain, and High Power
Added Efficiency
Ideal for Commercial, Military, Hi-Rel Space
Applications
Chip Dimensions: 356 x 241 microns
Chip Thickness: 100 microns
Description:
The MwT-PH7 is a AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.3 micron
Gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 28 GHz
frequency range. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is
produced using MwT's reliable metal systems and all devices from each wafer are screened to insure reliability. All chips are
passivated using MwT's patented "Diamond-Like Carbon" process for increased durability.
Electrical Specifications:
at Ta= 25
°C
SYMBOL
PARAMETERS & CONDITIONS
FREQ
UNITS
MIN
TYP
P1dB
Output Power at 1dB Compression
Vds=6.0 V Ids=0.75xIDSS=60 mA
12 GHz
dBm
22.0
24.0
SSG
Small Signal Gain
Vds=6.0 V Ids=0.75xIDSS=60 mA
12 GHz
18 GHz
dB
12.0
13.5
10.0
PAE
Power Added Efficiency at P1dB
Vds=7.0 V Ids=0.75xIDSS=60 mA
12 GHz
%
60
IDSS
Recommended IDSS Range
for Optimum P1dB
mA
58-
110
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