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參數(shù)資料
| 型號： | MWT-PH11 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 50K |
| 代理商： | MWT-PH11 |
MwT-PH11
High Power AlGaAs/InGaAs PHEMT
Preliminary Data Sheet
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Features:
+32 dBm typical Output Power at 12 GHz
9 dB typical Small Signal Gain at 12 GHz
50% typical PAE at 12 GHz
0.3 x 2400 Micron Refractory Metal/Gold Gate
Sorted into 40 mA Idss Bin Ranges
Excellent for High Power, and High Power Added Efficiency
Ideal for Commercial, Military, Hi-Rel Space Applications
Chip Dimensions: 775 x 343 microns
Chip Thickness: 100 microns
Description:
The MwT-PH11 is GaAs PHEMT device device whose nominal 0.3 micron gate length and 2400 microns gate width make it
ideally suited for applications requiring high power up to 1.5watt. The chip is produced using MwT's reliable metal systems and
all devices from each wafer are screened to insure reliability. All chips are passivated using MwT's patented "Diamond-Like
Carbon" process for increased durability.
Electrical Specifications:
at Ta= 25
°C
SYMBOL
PARAMETERS & CONDITIONS
FREQ
UNITS
MIN
TYP
OIP3
Output IP3 with two tones
Vds=7.0 V Ids=0.6xIDSS=420 mA
dBm
42
P1dB
Output Power at 1dB Compression
Vds=7.0 V Ids=0.6xIDSS=420 mA
12 GHz
dBm
30.0
32.0
SSG
Small Signal Gain
VDS=7.0 V Ids=0.6xIDSS=420 mA
12 GHz
dB
7.0
9.0
PAE
Power Added Efficiency at P1dB
VDS=7.0 V Ids=0.6xIDSS=420 mA
12 GHz
%
50
IDSS
Recommended IDSS Range
mA
440-
800
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