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參數(shù)資料
| 型號： | MW6S010GMR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | RF功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大?。?/td> | 542K |
| 代理商： | MW6S010GMR1 |
14
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
PACKAGE DIMENSIONS
TO-270-2
PLASTIC
CASE 1265-08
ISSUE G
DATUM
PLANE
BOTTOM VIEW
A1
2X
E4
E
D1
E1
D2
E3
A2
EXPOSED
HEATSINK AREA
A
B
D
H
PIN ONE ID
D
A
M
aaa
D
A
M
aaa
D
2X
b1
D3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
3. DATUM PLANE H IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS
“
D1" AND
“
E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS
D1" AND
E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE H.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
7. DIMENSION A2 APPLIES WITHIN ZONE
“
J" ONLY.
8. DIMENSIONS
“
D" AND
“
E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS
D" AND
E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE D.
NOTE 7
c1
F
ZONE J
E2
E5
A
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
MIN
.078
.039
.040
.416
.378
.290
.016
.436
.238
.066
.150
.058
.231
MAX
.082
.043
.042
.424
.382
.320
.024
.444
.242
.074
.180
.066
.235
MIN
1.98
0.99
1.02
10.57
9.60
7.37
0.41
11.07
6.04
1.68
3.81
1.47
5.87
MAX
2.08
1.09
1.07
10.77
9.70
8.13
0.61
11.28
6.15
1.88
4.57
1.68
5.97
MILLIMETERS
INCHES
F
b1
c1
aaa
.193
.007
.199
.011
4.90
0.18
5.06
0.28
.025 BSC
.004
0.64 BSC
0.10
PIN 1
PIN 2
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
E5
MW6S010NR1(MR1)
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|---|---|
| MW6S010GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MW6S010GNR1-CUT TAPE | 制造商:Freescale 功能描述:MW6S010 Series 450-1500 MHz 10 W 28 V Lateral N-Ch RF Power MOSFET |
| MW6S010MR1 | 功能描述:MOSFET RF N-CH 28V 10W TO-270-2 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MW6S010NR1 | 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MW6S010NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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