- 您現在的位置：買賣IC網 > PDF目錄382353 > MUN5137T1 (ON SEMICONDUCTOR) DIODE ZENER SINGLE 200mW 24Vz 5mA-Izt 0.0579 0.1uA-Ir 16.8 SOT-323 3K/REEL PDF資料下載
參數資料
| 型號： | MUN5137T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DIODE ZENER SINGLE 200mW 24Vz 5mA-Izt 0.0579 0.1uA-Ir 16.8 SOT-323 3K/REEL |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-04, SC-70, 3 PIN |
| 文件頁數： | 3/12頁 |
| 文件大?。?/td> | 132K |
| 代理商： | MUN5137T1 |
MUN5111T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
CollectorEmitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
EmitterBase Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
CollectorBase Breakdown Voltage (I
C
= 10 A, I
E
= 0)
V
(BR)CBO
50
Vdc
CollectorEmitter Breakdown Voltage
(Note 4)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
Vdc
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
CollectorEmitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MUN5130T1/MUN5131T1
(I
C
= 10 mA, I
B
= 1 mA) MUN5115T1/MUN5116T1/
MUN5132T1/MUN5133T1/MUN5134T1
V
CE(sat)
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k )
MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5113T1
MUN5136T1
MUN5137T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k )
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
相關PDF資料 |
PDF描述 |
|---|---|
| MUN5136T1 | Bias Resistor Transistor |
| MUN51xxT1 | Bias Resistor Transistor |
| MUN5135T1 | Bias Resistor Transistor |
| MUN5137T1 | DIODE ZENER SINGLE 300mW 24Vz 5mA-Izt 0.0579 0.1uA-Ir 16.8 SOT-23 3K/REEL |
| MUN5211DW1T1G | Dual Bias Resistor Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MUN5137T1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5138T1G | 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:Transistors Switching - Resistor Biased PNP DIGITAL TRANSISTOR |
| MUN5140T1G | 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PNP DIGITAL TRANSISTOR (B |
| MUN5141T1G | 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PNP DIGITAL TRANSISTOR (B |
| MUN51XXDW1T1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Dual Bias Resistor Transistors |
發(fā)布緊急采購，3分鐘左右您將得到回復。