- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382354 > MUN5135T1 (樂山無線電股份有限公司) Bias Resistor Transistor PDF資料下載
參數(shù)資料
| 型號： | MUN5135T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Bias Resistor Transistor |
| 中文描述： | 偏置電阻晶體管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 132K |
| 代理商： | MUN5135T1 |
Semiconductor Components Industries, LLC, 2004
October, 2004 Rev. 7
1
Publication Order Number:
MUN5111T1/D
MUN5111T1 Series
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
baseemitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC70/SOT323 package which is designed for low power
surface mount applications.
Features
PbFree Packages are Available
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC70/SOT323 package can be soldered using wave or reflow.
The modified gullwinged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
°
C/W
Thermal Resistance, Junction-to-Ambient
R
JA
618 (Note 1)
403 (Note 2)
°
C/W
Thermal Resistance, Junction-to-Lead
R
JL
280 (Note 1)
332 (Note 2)
°
C/W
Junction and Storage Temperature Range
T
J
, T
stg
55 to +150
°
C
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
PNP SILICON
BIAS RESISTOR
TRANSISTORS
SC70/SOT323
CASE 419
STYLE 3
Preferred
devices are recommended choices for future use
and best overall value.
3
2
1
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R
1
R
2
MARKING DIAGRAM
6x
= Specific Device Code
(See Order Info Table)
= Date Code
M
6x M
ORDERING INFORMATION
See specific ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MUN5137T1 | DIODE ZENER SINGLE 300mW 24Vz 5mA-Izt 0.0579 0.1uA-Ir 16.8 SOT-23 3K/REEL |
| MUN5211DW1T1G | Dual Bias Resistor Transistors |
| MUN5214DW1T1G | Dual Bias Resistor Transistors |
| MUN5215DW1T1G | Dual Bias Resistor Transistors |
| MUN5216DW1T1G | Dual Bias Resistor Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUN5135T1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5136 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MUN5136DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon |
| MUN5136DW1T1 | 功能描述:TRANS BRT PNP DUAL 50V SOT363 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列﹐預(yù)偏壓式 系列:- 標(biāo)準包裝:3,000 系列:- 晶體管類型:1 個 NPN，1 個 PNP - 預(yù)偏壓式（雙） 電流 - 集電極 (Ic)（最大）:70mA，100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k，2.2k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz，200MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000784046 |
| MUN5136DW1T1G | 制造商:ON Semiconductor 功能描述:SS SC88 BR XSTR PNP 50V - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。