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參數(shù)資料
| 型號(hào)： | MTY55N20E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM |
| 中文描述： | 55 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | CASE 340G-02, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 231K |
| 代理商： | MTY55N20E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
10000
1000
100
10
1
0
50
100
150
200
100
°
C
2
1.75
1.5
1.25
0.5
0
–50
–25
0
TJ, JUNCTION TEMPERATURE (
°
C)
25
50
75
100
125
150
0.027
0.026
0.025
0.024
0.023
0.022
ID, DRAIN CURRENT (AMPS)
15 V
0.05
0.04
0.03
0.02
0.01
0
0
40
80
120
100
60
20
120
00
0.5
1
1.5
2
2.5
3
3.5
4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
0
TJ = 25
°
C
VGS = 10 V
VDS
≥
10 V
VGS = 10 V
TJ = 100
°
C
–55
°
C
TJ = 25
°
C
VGS = 10 V
VGS = 0 V
100
80
60
40
20
120
100
80
60
40
20
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
0
40
80
120
100
60
20
TJ = 125
°
C
8 V
9 V
6 V
5 V
4 V
100
°
C
25
°
C
TJ = –55
°
C
25
°
C
VGS = 10 V
ID = 27.5 A
25
°
C
1
0.75
0.25
7 V
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