參數(shù)資料
型號： MTY55N20E
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM
中文描述： 55 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： CASE 340G-02, 3 PIN
文件頁數(shù)： 2/8頁
文件大小： 231K
代理商： MTY55N20E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250
μ
A)
Temperature Coefficient (Positive)
V(BR)DSS
200
—
—
250
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
200
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2
—
—
7
4
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 27.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 55 Adc)
(ID = 27.5 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
—
0.028
Ohm
—
—
1.3
—
1.6
1.8
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 27.5 Adc)
gFS
30
37
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1 MHz)
Ciss
Coss
Crss
—
7200
10080
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
1800
2520
Reverse Transfer Capacitance
—
460
920
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
)
RG = 4.7
td(on)
tr
td(off)
tf
—
33
66
ns
Rise Time
(VDD = 100 Vdc, ID = 55 Adc,
VGS = 10 Vdc,
—
200
400
Turn–Off Delay Time
—
150
300
Fall Time
—
170
340
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
245
343
nC
(VDS = 160 Vdc, ID = 55 Adc,
—
33
—
—
128
—
—
79
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 55 Adc, VGS = 0 Vdc)
(IS = 55 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.75
1.1
1.2
—
Vdc
Reverse Recovery Time
(See Figure 14)
dIS/dt = 100 A/
μ
s)
trr
—
310
—
ns
(IS = 55 Adc, VGS = 0 Vdc,
ta
tb
—
220
—
—
90
—
Reverse Recovery Stored Charge
QRR
—
4.6
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
13
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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