• 參數(shù)資料
    型號(hào): MUN5112T1
    廠商: ON SEMICONDUCTOR
    元件分類: 功率晶體管
    英文描述: PNP SILICON BIAS RESISTOR TRANSISTOR
    中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
    封裝: CASE 419-04, SC-70, 3 PIN
    文件頁(yè)數(shù): 1/10頁(yè)
    文件大?。?/td> 238K
    代理商: MUN5112T1
    PIN3
    COLLECTOR
    (OUTPUT)
    PIN2
    EMITTER
    (GROUND)
    PIN1
    BASE
    (INPUT)
    R1
    R2
    1
    Motorola Small–Signal Transistors, FETs and Diodes Device Data
    PNP Silicon Surface Mount Transistor with
    Monolithic Bias Resistor Network
    This new series of digital transistors is designed to replace a single device and its
    external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
    transistor with a monolithic bias network consisting of two resistors; a series base
    resistor and a base–emitter resistor. The BRT eliminates these individual components
    by integrating them into a single device. The use of a BRT can reduce both system
    cost and board space. The device is housed in the SC–70/SOT–323 package which
    is designed for low power surface mount applications.
    Simplifies Circuit Design
    Reduces Board Space
    Reduces Component Count
    The SC–70/SOT–323 package can be soldered using
    wave or reflow. The modified gull–winged leads absorb
    thermal stress during soldering eliminating the possibility
    of damage to the die.
    Available in 8 mm embossed tape and reel
    Use the Device Number to order the 7 inch/3000 unit reel.
    Replace “T1” with “T3” in the Device Number to order
    the 13 inch/10,000 unit reel.
    MAXIMUM RATINGS
    (TA = 25
    °
    C unless otherwise noted)
    Rating
    Symbol
    Value
    Unit
    Collector–Base Voltage
    VCBO
    VCEO
    IC
    PD
    50
    Vdc
    Collector–Emitter Voltage
    50
    Vdc
    Collector Current
    Total Power Dissipation @ TA = 25
    °
    C(1)
    Derate above 25
    °
    C
    100
    mAdc
    *
    150
    1.2
    mW
    mW/
    °
    C
    THERMAL CHARACTERISTICS
    Thermal Resistance — Junction–to–Ambient (surface mounted)
    R
    θ
    JA
    TJ, Tstg
    TL
    833
    °
    C/W
    Operating and Storage Temperature Range
    –65 to +150
    °
    C
    Maximum Temperature for Soldering Purposes,
    Time in Solder Bath
    260
    10
    °
    C
    Sec
    DEVICE MARKING AND RESISTOR VALUES
    Device
    Marking
    R1 (K)
    R2 (K)
    MUN5111T1
    MUN5112T1
    MUN5113T1
    MUN5114T1
    MUN5115T1(2)
    MUN5116T1(2)
    MUN5130T1(2)
    MUN5131T1(2)
    MUN5132T1(2)
    MUN5133T1(2)
    MUN5134T1(2)
    6A
    6B
    6C
    6D
    6E
    6F
    6G
    6H
    6J
    6K
    6L
    10
    22
    47
    10
    10
    4.7
    1.0
    2.2
    4.7
    4.7
    22
    10
    22
    47
    47
    1.0
    2.2
    4.7
    47
    47
    1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
    2. New devices. Updated curves to follow in subsequent data sheets.
    Thermal Clad is a trademark of the Bergquist Company
    Preferred
    devices are Motorola recommended choices for future use and best overall value.
    Order this document
    by MUN5111T1/D
    SEMICONDUCTOR TECHNICAL DATA
    PNP SILICON
    BIAS RESISTOR
    TRANSISTOR
    Motorola Preferred Devices
    CASE 419–02, STYLE 3
    SC–70/SOT–323
    1
    2
    3
    REV 2
    相關(guān)PDF資料
    PDF描述
    MUN5113T1 PNP SILICON BIAS RESISTOR TRANSISTOR
    MUN5114T1 PNP SILICON BIAS RESISTOR TRANSISTOR
    MUN5115T1 PNP SILICON BIAS RESISTOR TRANSISTOR
    MUN5116T1 PNP SILICON BIAS RESISTOR TRANSISTOR
    MUN5131T1 PNP SILICON BIAS RESISTOR TRANSISTOR
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