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參數(shù)資料
| 型號： | MTP50N06EL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| 中文描述： | 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 179K |
| 代理商： | MTP50N06EL |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
0
0.8
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1.6
2.4
3.2
4.0
0
20
60
100
Figure 1. On–Region Characteristics
ID
1
3
5
7
9
0
20
60
100
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
20
60
100
0.01
0.016
0.028
0.04
R
0
20
80
100
0.021
0.027
0.033
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
20
50
60
1
10
1000
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VDS
≥
10 V
TJ = – 55
°
C
25
°
C
100
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
9 V
8 V
6 V
5 V
7 V
40
80
2
4
6
8
40
80
VGS = 10 V
TJ = 100
°
C
25
°
C
– 55
°
C
40
80
40
60
10
30
40
0.022
0.034
0.024
0.030
VGS = 10 V
15 V
25
°
C
100
°
C
TJ = 125
°
C
100
R
(
TJ, JUNCTION TEMPERATURE (
°
C)
VGS = 10 V
ID = 21 A
2
1.5
1
0.5
0
–50
–25
0
25
50
75
100
125
150
175
2.5
相關PDF資料 |
PDF描述 |
|---|---|
| MTP50N06V | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| MTP50N06VL | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM |
| MTP52N06VL | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM |
| MTP52N06V | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM |
| MTP55N06 | TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTP50N06V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP50N06V_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP50N06VL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(3+Tab) TO-220AB Rail |
| MTP50P03HDL | 功能描述:MOSFET 30V 50A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP50P03HDLG | 功能描述:MOSFET PFET T0220 30V 50A 25mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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