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參數(shù)資料
| 型號： | MTP50N06VL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM |
| 中文描述： | 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 179K |
| 代理商： | MTP50N06VL |
1
Motorola, Inc. 1996
N–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resis-
tance area product about one–half that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E–FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V
On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and
TMOS E–FET
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
VGSM
60
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
60
Vdc
±
20
±
25
Vdc
Vpk
Drain Current — Continuous @ 25
°
C
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ 25
°
C
Derate above 25
°
C
ID
ID
IDM
42
30
147
Adc
Apk
PD
125
0.83
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 175
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 42 Apk, L = 0.454
μ
H, RG = 25
)
400
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
1.2
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
TL
260
°
C
REV 3
Order this document
by MTP50N06V/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
42 AMPERES
60 VOLTS
RDS(on) = 0.028 OHM
Motorola Preferred Device
CASE 221A–06, Style 5
TO–220AB
TM
D
S
G
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