參數(shù)資料
型號: MTP4N40E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM
中文描述: 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 3/8頁
文件大小: 239K
代理商: MTP4N40E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
0
4
8
12
16
20
0
3
5
6
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
1
2
4
0
0.5
1.5
2.5
3.5
0
1
4
6
0.5
1
1.5
2
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0
0.5
1.25
2.0
100
200
300
400
1
10
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
–25
0
25
50
75
100
125
150
TJ = 25
°
C
VDS
10 V
TJ = –55
°
C
25
°
C
100
°
C
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 10 V
2
4
2
6
10
14
18
1
9 V
5 V
6 V
7 V
8 V
VGS = 10 V
0
3
5
6
2
4
1
2
3
4
5
6
7
8
9
3
2
1
3
5
6
2.25
1.75
1.25
0.75
2
3
5
0.75
2.5
150
250
350
VGS = 10 V
15 V
VGS = 10 V
ID = 2 A
0.25
1.5
2.25
1.0
1.75
50
0
VGS = 0 V
TJ = 125
°
C
100
°
C
7
8
7
8
2.5
3.5
4.5
5.5
6.5
7.5
8.5
4
7
8
7
0.5
1.5
4.5
6.5
2.5
3.5
5.5
7.5
相關PDF資料
PDF描述
MTP4N50E TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
MTP50N06 TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
MTP50N06EL TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
MTP50N06V TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
MTP50N06VL TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM
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MTP4N80 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM
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