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參數(shù)資料
| 型號(hào)： | MTP4N40E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM |
| 中文描述： | 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 239K |
| 代理商： | MTP4N40E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
400
—
—
420
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
6.0
4.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 2.0 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 4.0 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
1.3
1.8
Ohms
—
—
—
—
8.6
4.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc)
gFS
1.8
2.5
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
440
616
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
72
100
Reverse Transfer Capacitance
—
14
19.6
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
—
9.0
20
ns
Rise Time
(VDD = 200 Vdc, ID = 4.0 Adc,
VGS = 10 Vdc,
—
11
30
Turn–Off Delay Time
—
18
30
Fall Time
—
14
30
Gate Charge
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
13
21
nC
(VDS = 320 Vdc, ID = 4.0 Adc,
—
2.5
—
—
6.0
—
—
7.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.9
0.78
1.6
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
—
200
—
ns
(IS = 4.0 Adc, VGS = 0 Vdc,
—
99
—
tb
—
101
—
Reverse Recovery Stored Charge
QRR
—
1.03
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
—
3.5
4.5
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
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| MTP4N50E | TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS |
| MTP50N06 | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| MTP50N06EL | TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| MTP50N06V | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| MTP50N06VL | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP4N45 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 4.5 A, 450V/500V |
| MTP4N50 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 4.5 A, 450V/500V |
| MTP4N50E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS |
| MTP4N80 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
| MTP4N80E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
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