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參數(shù)資料
| 型號： | MTP3N25E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
| 中文描述： | 3 A, 250 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 208K |
| 代理商： | MTP3N25E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
0
2
4
6
8
10
3
5
6
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
1.0
2.0
3.0
4.0
5.0
0.4
0.8
1.6
2.4
3.2
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0.4
0.8
1.2
1.6
2.0
0
100
200
1
10
100
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
–25
0
25
50
75
100
125
150
TJ = 25
°
C
VDS
≥
10 V
TJ = –55
°
C
100
°
C
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
2
4
1
3
5
7
9
1
5 V
6 V
7 V
VGS = 10 V
2.0
3.0
4.0
5.0
6.0
7.0
2.5
3.5
4.5
5.5
6.5
7.5
2.8
2.0
1.2
0.5
1.5
2.5
3.5
4.5
5.5
50
150
250
TJ = 125
°
C
100
°
C
0
3
5
6
2
4
1
0
6.0
1.0
1.1
1.3
1.5
1.7
1.6
1.4
1.2
0
1.0
2.0
3.0
4.0
5.0
0.5
1.5
2.5
3.5
4.5
5.5
6.0
15 V
25
°
C
25
°
C
VGS = 10 V
ID = 1.5 A
VGS = 10 V
4 V
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| MTP3N50E | TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP3N35 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 350-400 V |
| MTP3N40 | 制造商:n/a 功能描述:3N40 S8H2A |
| MTP3N50 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
| MTP3N50E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB 制造商:UNBRANDED 功能描述:MOSFET, N TO-220 |
| MTP3N55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HIGH VOLTAGE POWER MOSFET N-CHANNEL |
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